2SA2169 Sanyo Semicon Device, 2SA2169 Datasheet - Page 2

• Manufacturer Part Number: 2SA2169
• Description: PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
• Manufacturer: Sanyo Semicon Device

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DataSheet
4
Continued from preceding page.
Package Dimensions
unit : mm
2045B
Switching Time Test Circuit
U
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
.com
0.85
INPUT
0.6
PW=20 s
D.C. 1%
0.7
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
2.3
0
1
0
2SA2169
6.5
5.0
2
4
50
V BE = --5V
V R
Parameter
Collector-to-Emitter Voltage, V CE -- V
3
--0.5
2.3
I B1
100 F
I B2
R B
+
I C -- V CE
2.3
--1.0
470 F
0.5
V CC =20V
1.2
+
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
V (BR)CBO
V (BR)CEO
V (BR)EBO
OUTPUT
R L
Symbol
t stg
t on
t f
--1.5
I C =20I B1 = --20I B2 =3A
For PNP, the polarity is reversed.
2SA2169 / 2SC6017
--2mA
I C =(--)100 A, I E =0
I C =(--)1mA, R BE =
I E =(- -)100 A, I C =0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IT08961
I B =0
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--2.0
Package Dimensions
unit : mm
2044B
0.85
Conditions
0.6
2.3
1
2
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
6.5
5.0
4
0
0
2SC6017
3
2.3
Collector-to-Emitter Voltage, V CE -- V
0.5
(--50)100
0.5
min
0 to 0.2
(--)50
1.2
(--)6
I C -- V CE
2.3
1.0
(650)1000
Ratings
0.5
typ
(70)40
(60)80
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
max
1.5
No.8275-2/5
2mA
I B =0
IT08962
Unit
ns
ns
ns
V
V
V
2.0