2SA2196 Sanyo Semicon Device, 2SA2196 Datasheet

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2SA2196

Manufacturer Part Number
2SA2196
Description
PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet4U.com
Ordering number : ENA0462
2SA2196 / 2SC6101
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Relay drivers, lamp drivers, motor drivers, flash.
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA2196
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
I B
f T
Tj
SANYO Semiconductors
2SA2196 / 2SC6101
Tc=25 C
V CB =(--)30V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)2V, I C =(- -)500mA
V CE =(--)10V, I C =(--)500mA
V CB =(--)10V, f=1MHz
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Conditions
Conditions
DATA SHEET
O0406EA MS IM TC-00000206
min
200
Ratings
(380)450
typ
(25)20
Ratings
Continued on next page.
--55 to +150
(--30)40
max
(- -)600
(--)0.1
(--)0.1
(--)30
(- -)6
(- -)5
(- -)7
150
560
No. A0462-1/5
1
8
Unit
Unit
MHz
mA
pF
W
W
V
V
V
A
A
C
C
A
A

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2SA2196 Summary of contents

Page 1

... Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. • Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current ...

Page 2

... Collector-to-Emitter Voltage 2SA2196 / 2SC6101 Symbol Conditions V CE (sat =(--)1.5A =(--)30mA V CE (sat =(--)1.5A =(--)75mA V BE (sat =(--)1.5V =(--)30mA V (BR)CBO I C =(--) =0A V (BR)CEO I C =(--)1mA (BR)EBO I E =(- -) = See specified Test Circuit. ...

Page 3

... Collector-to-Base Voltage 1000 100 --0.01 --0.1 Collector Current 2SA2196 / 2SC6101 5.0 2SC6101 4 =2V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --1.0 --1.2 0 IT11284 1000 2SA2196 -- 100 --10 0.01 IT11285 100 2SA2196 ...

Page 4

... V CE (sat 1.0 Collector Current (sat 2SC6017 = 1.0 Collector Current 2SA2196 / 2SC6101 100 120 140 Ambient Temperature No. A0462-4 IT11295 5 7 IT11296 5 7 IT11297 160 IT11476 ...

Page 5

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. 2SA2196 / 2SC6101 140 160 IT11477 PS ...

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