IXZ316N60 IXYS Corporation, IXZ316N60 Datasheet
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IXZ316N60
Related parts for IXZ316N60
IXZ316N60 Summary of contents
Page 1
... DSS Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. 600 3.5 4. 25C J T =125C J 0.437 D25 , pulse test 15.2 D25 -55 175 -55 300 3.5 IXZ316N60 Z-MOS RF Power MOSFET V DSS I D25 R DS(on) ings P DC 600 V 600 V ±20 V ± TBD mJ 5 V/ns >200 V/ns 880 ...
Page 2
... J min. typ. 1930 = 0 125 DSS(max) 17 0.8 V DSS Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,881,106 4,891,686 5,063,307 5,187,117 6,404,065 6,583,505 IXZ316N60 Z-MOS RF Power MOSFET max. Ω max. 18 Α 108 A 1 4,931,844 5,017,508 ...
Page 3
... Crss 200 300 Vds in Volts IXZ316N60 Capacitances verses Vds IXZ316N60 Z-MOS RF Power MOSFET Ciss Coss 400 500 600 Doc #dsIXZ316N60 REV 06/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...