IXZ316N60 IXYS Corporation, IXZ316N60 Datasheet
IXZ316N60
Manufacturer Part Number
IXZ316N60
Description
600V (max) Switch Mode MOSFETS
Manufacturer
IXYS Corporation
Datasheet
1.IXZ316N60.pdf
(3 pages)
www.DataSheet4U.com
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
Optimized for RF Operation
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
≤ 150°C, R
= 0
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
=0
DM
= 0 V, I
= V
= ±20 V
= 0.8V
= 20 V, I
= 50V, I
, di/dt ≤ 1 00A/µs, V
GS
, I
DSS
D
D
DC
D
D
G
= 4 ma
= 250µΑ
= 0.5I
, V
= 0.5I
= 0.2Ω
DS
D25
= 0
D25
GS
, pulse test
TM
= 1 MΩ
T
T
J
DD
J
MOSFET Process
= 25C
=125C
≤ V
DSS
JM
,
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
600
-55
-55
3.5
0.437
4.25
15.2
typ.
175
300
3.5
Maximum Rat-
>200 V/ns
TBD
0.17 C/W
0.34 C/W
600
600
±20
±30
880
440
3.0
+ 175
18
90
18
max.
+175
±100
5 V/ns
6.5
50
1
ings
mJ
Z-MOS RF Power MOSFET
W
W
W
V
V
V
V
A
A
A
mA
µA
nA
°C
°C
°C
°C
Ω
V
V
S
g
GATE
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
IXZ316N60
SG1
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
SG2
DSS
DC
DS(on)
DS(on)
=
=
=
=
SD1
0.44 Ω
18.0 A
880 W
600 V
SD2
DRAIN
Related parts for IXZ316N60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
High Current Power MOSFET
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXZ316N60 Summary of contents
Page 1
... DSS Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. 600 3.5 4. 25C J T =125C J 0.437 D25 , pulse test 15.2 D25 -55 175 -55 300 3.5 IXZ316N60 Z-MOS RF Power MOSFET V DSS I D25 R DS(on) ings P DC 600 V 600 V ±20 V ± TBD mJ 5 V/ns >200 V/ns 880 ...
Page 2
... J min. typ. 1930 = 0 125 DSS(max) 17 0.8 V DSS Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,881,106 4,891,686 5,063,307 5,187,117 6,404,065 6,583,505 IXZ316N60 Z-MOS RF Power MOSFET max. Ω max. 18 Α 108 A 1 4,931,844 5,017,508 ...
Page 3
... Crss 200 300 Vds in Volts IXZ316N60 Capacitances verses Vds IXZ316N60 Z-MOS RF Power MOSFET Ciss Coss 400 500 600 Doc #dsIXZ316N60 REV 06/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf ...