U424 Micross, U424 Datasheet

U424

Manufacturer Part Number

U424

Description

Low Leakage

Manufacturer

Micross

Datasheet

1.U424.pdf (1 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

U4240B

Manufacturer:

TFK

Quantity:

20 000

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Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

The U424 monolithic dual n-channel JFET is designed

to provide very high input impedance for differential

amplification and impedance matching. Among its

many unique features, this series offers operating gate

current specified at -500 fA. The U424 is a direct

replacement for discontinued Siliconix U424.

The hermetically sealed TO-71 & TO-78 packages are

well suited for military applications. The 8 Pin P-DIP

and 8 Pin SOIC provide ease of manufacturing, and the

symmetrical pinout prevents improper orientation.

(See Packaging Information).

U424 Applications:

Available Packages:

U424 in TO-71 & TO-78

U424 in PDIP & SOIC

U424 available as bare die

Please contact

Email:

SYMBOL

‐I

GSS

CMR

GS(off)

max.

DSS

max.

OSS

RSS

fSS

max.

GGO

ISS

GSS

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The U424 is a high input impedance Monolithic Dual N-Channel JFET

Linear Systems replaces discontinued Siliconix U424

COMMON MODE REJECTION

Gate‐To‐Gate Breakdown

OUTPUT CONDUCTANCE

‐20 log | ∆V

TRANSCONDUCTANCE

Breakdown Voltage

At Full Conduction

CHARACTERISTICS

High Temperature

Typical Operation

DRAIN CURRENT

Operating Range

Reverse Transfer

for full package and die dimensions

Pinchoff voltage

GATE CURRENT

Full Conduction

GATE VOLTAGE

Full Conduction

CAPACITANCE

Operating

Voltage

NOISE

Figure

Input

GS1‐2

/ ∆V

MIN.

300

120

HIGH INPUT IMPEDANCE

‐‐

MONOLITHIC DUAL

N-CHANNEL JFET

FEATURES

HIGH INPUT IMPEDANCE

HIGH GAIN

LOW POWER OPERATION

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Voltage and Current for Each Transistor – Note 1

‐V

‐I

Maximum Power Dissipation

Device Dissipation @ Free Air – Total 400mW @ +125°C

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL

|∆V

| V

TYP.

200

0.1

G(f)

‐‐

GSS

DSO

TO-71 / TO-78 (Top View)

GS1‐2

U424

GS1‐2

| max.

/∆T|max.

MAX.

1500

1000

350

250

2.0

1.8

.25

1.0

3.0

1.5

‐‐

Gate Voltage to Drain or Source

Drain to Source Voltage

Gate Forward Current

CHARACTERISTICS

OFFSET VOLTAGE

TEMPERATURE

DRIFT VS.

nV/√Hz

UNITS

µmho

µA

gfs = 120µmho MIN

VALUE UNITS

P-DIP / SOIC (Top View)

GS(OFF)

= 0.25pA MAX

= +125°C

∆V

= 1µA I

= 10V I

= 10V V

= 2V MAX

= 10V V

= 10 to 20V I

= 5 to 10V I

µV/°C

= 10V I

= 10V V

= 0V V

= 0 I

CONDITIONS

‐65°C to +150°C

+150°C

40V

10mA

f = 10Hz

= 30µA f = 1KHz

= 30µA f = 10Hz

= 30µA R

CONDITIONS

= 30µA f = 1kHz

= 0 f = 1MHz

= 0V f = 1kHz

= 0 I

=‐55°C to +125°C

=10V, I

= 30µA

= 20V

=1nA

= 1nA

= 30µA

= 0V

= 10MΩ

=30µA

= 0

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