P16NS25 STMicroelectronics, P16NS25 Datasheet

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P16NS25

Manufacturer Part Number

P16NS25

Description

Search -----> STP16NS25

Manufacturer

STMicroelectronics

Datasheet

1.P16NS25.pdf (9 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

P16NS25

Manufacturer:

ST

0

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

P16NS25

Manufacturer:

ST

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

P16NS25F

Manufacturer:

ST

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

P16NS25FP

Manufacturer:

KEC

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

P16NS25FP

Manufacturer:

ST

0

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DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

May 2002

STP16NS25

STP16NS25FP

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

IDEAL FOR MONITOR’s B+ FUNCTION

Symbol

dv/dt (1)

I

V

DM

P

V

V

V

T

DGR

I

I

TOT

ISO

T

DS

GS

stg

D

D

TYPE

j

(

l

)

Drain-source Voltage (V

Drain-gate Voltage (R

Gate- source Voltage

Drain Current (continuos) at T

Drain Current (continuos) at T

Drain Current (pulsed)

Total Dissipation at T

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

DS

N-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FP

(on) = 0.23

250 V

250 V

V

DSS

< 0.28

< 0.28

R

Parameter

DS(on)

C

GS

= 25°C

GS

= 20 k )

= 0)

C

C

= 25°C

= 100°C

16 A

16 A

I

D

(1) I

(*) Limited only by maximum temperature allowed

MESH OVERLAY™ MOSFET

SD

INTERNAL SCHEMATIC DIAGRAM

16A, di/dt 300 A/ s, V

STP16NS25

TO-220

140

16

11

64

1

-

1

–65 to 150

STP16NS25FP

2

Value

± 20

3

250

250

5

DD

STP16NS25

V

STP16NS25FP

(BR)DSS

16(*)

64(*)

2500

11(*)

0.33

TO-220FP

40

, Tj T

jMAX

1

2

W/°C

Unit

V/ns

3

°C

W

V

V

V

A

A

A

V

1/9

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