TLP114A(IGM) Toshiba, TLP114A(IGM) Datasheet
TLP114A(IGM)
Related parts for TLP114A(IGM)
TLP114A(IGM) Summary of contents
Page 1
... TLP114A consists of a high output power GaAℓAs light emitting diode, optically coupled to a high speed detector of one chip photo diode−transistor. TLP114A(IGM) has no internal base connection, and a faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. ...
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... Rating (Note (Note (Note FPT -0.5~20 O -0.5~ (Note 4) P 100 O T -55~100 opr T -55~125 stg T 260 sol (Note 5) BV 3750 S 2 TLP114A(IGM) Unit °C °C °C Vrms 2002-09-25 ...
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... Ta=-25~100° =10mA, V =4. =2.4mA O Symbol Test Condition C V=0, f=1MHz S R.H.≤60%, V =500V AC, 1 minute BV AC, 1 second, in oil S DC, 1 minute, in oil 3 TLP114A(IGM) Min. Typ. Max. 1.22 1.42 1.72 -2 ― ― ― 10 ― 30 ― ― =5.5V 3 500 ― ― ― 50 ― ― 0.01 ― 30 ― ...
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... =1500V H CM p-p R =20kΩ =10mA =1500V L CM p-p R =20kΩ 15V Output 4 monitor 4 TLP114A(IGM) Min. Typ. Max. =20kΩ 0.1 0.45 0.8 L =20kΩ L 0.1 0.45 0.9 =20kΩ L 0.1 0.45 1.0 =20kΩ ― 0.15 0.7 L =20kΩ L ― 0.25 0.8 =20kΩ L ― 0.25 0.9 10000 15000 ― ...
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... Test Circuit 2: Common Mode Noise Immunity Test Circuit Pulse gen Z = 50Ω O 1200 ( V ) 1200 µ µ Output monitor 0mA 10mA TLP114A(IGM) 1500V 90% 10 15V 2002-09-25 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 TLP114A(IGM) 000707EBC 2002-09-25 ...