MX29LV320MB Macronix International, MX29LV320MB Datasheet - Page 62

• Manufacturer Part Number: MX29LV320MB
• Description: 32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Manufacturer: Macronix International

ERASE AND PROGRAMMING PERFORMANCE
P/N:PM1129
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V VCC. Programming specifications
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCH-UP CHARACTERISTICS
DATA RETENTION
PARAMETER
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time (Note 4)
Total Accelerated Effective Write Buffer
Program Time (Note 4)
Chip Program Time
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
Parameter
Minimum Pattern Data Retention Time
assume checkerboard data pattern.
including 100,000 program/erase cycles.
write buffer.
operation.
Tables 3 for further information on command definitions.
Typ (Note 1)
31.5
240
200
62
0.5
32
MX29LV320MT/B
Max (Note 2)
3.5
Min
20
-100mA
Unit
sec
sec
sec
us
-1.0V
-1.0V
us
MIN.
prior to erasure
Excludes 00h
REV. 1.1 , JUL. 14, 2005
programming
system level
Comments
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Excludes
overhead
Note 6
Note 7
Years
VCC + 1.0V
Unit
+100mA
13.5V
MAX.