sch2811 Sanyo Semiconductor Corporation, sch2811 Datasheet - Page 2

• Manufacturer Part Number: sch2811
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
7028-003
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
Parameter
1.6
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
yfs
Qg
V R
V F
I R
t rr
C
t r
t f
I D =--1mA, V GS =0V
V DS =--30V, V GS =0V
V GS = 16V, V DS =0V
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -0.5A
I D =--0.5A, V GS =- -10V
I D =--0.3A, V GS =- -4V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -10V, I D =--1.0A
V DS =--10V, V GS =- -10V, I D =--1.0A
V DS =--10V, V GS =- -10V, I D =--1.0A
I S =--1.0A, V GS =0V
I R =0.5mA
I F =0.5A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2811
Conditions
Electrical Connection
1
6
5
2
min
0.57
--1.2
--30
30
3
4
Ratings
typ
--0.91
0.95
12.5
12.2
0.48
0.45
0.42
320
590
104
3.3
22
17
24
12
13
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
max
0.48
--2.6
--1.5
420
830
120
10
No. A0440-2/6
10
--1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
A
A
A