psmn038 NXP Semiconductors, psmn038 Datasheet - Page 5

• Manufacturer Part Number: psmn038
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07897
Product specification
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
g(tot)
gs
gd
iss
oss
rss
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovery charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
DS
GS
GS
DS
GS
DD
Rev. 01 — 16 January 2001
T
T
T
T
T
= 2.3 A; V
= 6.3 A; dI
= 250 A; V
= 1 mA; V
= 6.3 A; V
j
j
j
j
j
= 80 V; V
= 100 V; V
= 15 V; I
= 25 C
= 150 C
= 55 C
= 20 V; V
= 10 V; I
= 25 C
= 150 C
= 0 V; V
= 50 V; I
DS
DD
GS
DS
S
D
D
D
GS
/dt = 100 A/ s; V
N-channel enhancement mode field-effect transistor
GS
= 5.2 A;
= 6.3 A;
= 1 A; V
GS
DS
= V
= 50 V; V
= 0 V;
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V
= 0 V; T
= 0 V
GS
;
Figure 13
Figure 9
GS
Figure 11
Figure 7
j
GS
= 25 C
j
= 10 V; R
= 150 C
= 10 V;
GS
and
Figure 12
= 0 V
G
Figure 14
8
= 6
PSMN038-100K
© Philips Electronics N.V. 2001. All rights reserved.
Min
100
2
1.2
Typ
130
33
76
20
43
6.5
16
1740
220
135
15
13
50
25
0.7
85
0.3
Max
6
1
0.5
100
38
88
21.5
30
25
80
40
1.1
5 of 13
Unit
V
V
V
V
mA
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
A
C