psmn013-30kl NXP Semiconductors, psmn013-30kl Datasheet - Page 9

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psmn013-30kl

Manufacturer Part Number
psmn013-30kl
Description
N-channel 30 V 13 M Logic-level Mosfet In So8
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN013-30KL
Objective data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
I
D
= 1 mA; V
0
0
DS
= V
max
min
typ
GS
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003aae453
003aaf978
T
T
j
j
(°C)
( ° C)
180
180
Rev. 01 — 14 April 2011
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
N-channel 30 V 13 mΩ logic-level MOSFET in SO8
R
(mΩ)
DSon
60
40
20
0
of drain current; typical values
T
0
V
j
V
V
V
GS(pl)
= 25°C
DS
GS(th)
GS
Q
V
GS1
GS
(V) = 2.6
5
I
Q
D
PSMN013-30KL
GS
Q
GS2
Q
G(tot)
Q
GD
10
2.8
© NXP B.V. 2011. All rights reserved.
003aag005
3.5
4.0
4.5
003aaa508
3.0
10
I
D
(A)
15
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