gt30j121 TOSHIBA Semiconductor CORPORATION, gt30j121 Datasheet - Page 3

• Manufacturer Part Number: gt30j121
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

60
50
40
30
20
10
20
16
12
60
50
40
30
20
10
0
8
4
0
0
0
0
0
Common emitter
Tc = 25°C
Common emitter
V
CE
Tc = 125°C
= 5 V
Collector-emitter voltage V
Gate-emitter voltage V
Gate-emitter voltage V
1
4
4
I C = 10 A
30
V
8
2
8
I
I
CE
C
20
C
−40
– V
– V
25
– V
15
60
CE
GE
GE
12
12
3
GE
GE
CE
Common emitter
Tc = 25°C
10
(V)
(V)
V GE = 8 V
16
16
4
(V)
9
20
20
5
3
20
16
12
20
16
12
−60
8
4
0
8
4
0
4
3
2
1
0
0
0
Common emitter
V GE = 15 V
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
I C = 10 A
I C = 10 A
Case temperature Tc (°C)
30
30
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
60
60
GE
GE
– Tc
12
12
60
GE
GE
Common emitter
Tc = −40°C
Common emitter
Tc = 125°C
I C = 10 A
(V)
(V)
100
16
16
30
60
GT30J121
2006-11-01
140
20
20