gt80j101b TOSHIBA Semiconductor CORPORATION, gt80j101b Datasheet - Page 2

• Manufacturer Part Number: gt80j101b
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Note 2: Switching time measurement circuit and input/output waveforms.
Caution on handling
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
This device is MOS gate type. Therefore, please care about ESD when use.
0
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
R
G
V
CC
(Ta
R
L
V
V
V
CE (sat)
CE (sat)
Symbol
GE (OFF)
I
I
C
25°C)
GES
CES
t
t
off
on
t
t
ies
r
f
(1)
(2)
0
0
V
V
V
I
I
V
Resistive load
V
V
(Note 2)
C
C
GE
GG
CE
CE
CE
CC
V
V
I
GE
CE
C
10 A, V
80 A, V
600 V, V
5 V, I
10 V, V
300 V, I
2
25 V, V
15 V, R
t
90%
d (off)
C
GE
GE
Test Condition
GE
GE
CE
80 mA
C
15 V
15 V
G
t
90%
off
t
0, f
f
80 A
0
0
33
10%
1 MHz
10%
10%
Min
3.0
t
on
t
r
5500
0.25
Typ.
2.4
0.3
0.5
0.7
90%
GT80J101B
2006-06-05
0.40
Max
1.0
6.0
2.0
2.9
500
Unit
mA
nA
pF
V
V
s