ma4e1310 M/A-COM Technology Solutions, Inc., ma4e1310 Datasheet - Page 3

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ma4e1310

Manufacturer Part Number
ma4e1310
Description
Gaas Flip Chip Schottky Barrier Diode
Manufacturer
M/A-COM Technology Solutions, Inc.
Datasheet
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
GaAs Flip Chip Schottky Barrier Diode
MA4E1310
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
Electrostatic Discharge ( ESD ) Classification
100.00
Operating Temperature
Mounting Temperature
Storage Temperature
10.00
Forward Current vs Temperature
Incident LO Power
Incident RF Power
1.00
0.10
0.01
0.00
Parameter
Absolute Maximum Ratings
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
+125°C
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Absolute Maximum
+235°C for 10 seconds
-65 °C to +125 °C
-65 °C to +150 °C
+20 dBm .
+20 dBm
Class 0
25°C
1
- 50°C
Rev. V2

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