2sj246 Renesas Electronics Corporation., 2sj246 Datasheet
2sj246
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2sj246 Summary of contents
Page 1
... L SILICON P-CHANNEL MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item — ...
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... L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ——————————————————————————————————————————— ...
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... Drain to Source Voltage Typical Transfer Characteristics – –25°C –8 Pulse test V = – –6 –4 –2 –10 0 –1 –2 Gate to Source Voltage 2SJ246 L , 2SJ246 S 10µs 100µs –10 –30 –50 V (V) DS 25°C 75°C –3 –4 –5 V (V) GS ...
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... L , 2SJ246 S Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 –1.6 –1 – –0.8 –1 A –2 A –0.4 0 –2 –4 –6 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse test 0 – – – 0.2 –5 A –10 V 0.1 –1 A, – – ...
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... V = – µ –30 V, duty DD 200 –4 tf 100 –8 50 –12 20 – –20 –0.1 –0.2 –0.5 –40 Drain Current 2SJ246 L , 2SJ246 MHz Ciss Coss Crss –30 –40 –50 V (V) DS < td(off) tr td(on) –1 –2 –5 –10 I (A) ...
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... L , 2SJ246 S Reverse Drain Current vs. Source to Drain Voltage –10 Pulse test –8 –6 –10 V –4 – – –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V –2.0 (V) SD ...
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... Pulse Width Switching Time Test Circuit Waveform Vout Vin Monitor Monitor D.U. Vin – –10 V 2SJ246 L , 2SJ246 25°C ch – c( (t) • ch – – 6.25 °C/ ° 100 (s) Vin 10% 90% 90% ...