2sj246 Renesas Electronics Corporation., 2sj246 Datasheet - Page 5

• Manufacturer Part Number: 2sj246
• Description: Silicon P-channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

–100
–20
–40
–60
–80
200
100
50
20
10
0
–0.1 –0.2
0
V
DS
di/dt = 50 A/µs, Ta = 25°C
V
Reverse Drain Current
GS
Dynamic Input Characteristics
I = –7 A
Body to Drain Diode Reverse
D
–8
Gate Charge
= 0, Pulse test
–0.5
Recovery Time
V
–16
DD
= –10 V
–1
–25 V
–24
V
DD
Qg (nc)
–2
= –25 V
V
GS
I
–10 V
–32
DR
–5
(A)
–40
–10
0
–4
–8
–12
–16
–20
10000
5000
2000
1000
500
200
100
500
200
100
50
20
10
–0.1 –0.2
5
0
V
V
Drain to Source Voltage
GS
DD
Typical Capacitance vs. Drain to
= –10 V, PW = 2 µs,
= –30 V, duty
:
–10
Switching Characteristics
Drain Current
–0.5
Source Voltage
–20
tf
tr
–1
Ciss
< =
td(off)
td(on)
Crss
Coss
1 %
–30
2SJ246 L , 2SJ246 S
–2
I
D
V
f = 1 MHz
V
(A)
GS
–40
DS
–5
= 0
(V)
–10
–50