2sk3348 Renesas Electronics Corporation., 2sk3348 Datasheet
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2sk3348
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2sk3348 Summary of contents
Page 1
... Silicon N Channel MOS FET Features Low on-resistance R = 1.6 typ 2.2 typ 2 2.5 V gate drive device. Small package (CMPAK) Outline CMPAK G 2SK3348 High Speed Switching = Source 2. Gate 3. Drain S ADE-208-772 A (Z) 2nd.Edition. June 1999 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics ( ...
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... Drain to Source Voltage Value on the alumina ceramic boad.(12.5x20x0.7mm) Typical Transfer Characteristics 0 Pulse Test 0.4 0.3 0.2 0.1 75 ° (V) Gate to Source Voltage V GS (V) 2SK3348 10 µs 100 µ shot ( –25 °C 25 ° ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test 0 0.6 0 100 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 5 4 100m =2. 10m A,50m A,100mA 1 Pulse Test 0 – Case Temperature Tc 4 Static Drain to Source on State Resistance vs ...
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... Drain to Source Voltage V (V) DS Reverse Drain Current vs. Source to Drain Voltage 0.5 Pulse Test 0 0 0.1 –2 0.2 0.4 0.6 .0.8 Source to Drain Voltage V SD Switching Characteristics 1000 µs, duty < 1% 100 10 0.01 20 Drain Current 1 (V) 2SK3348 = d(off) t d(on) 0.1 1 ...
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... Switching Time Test Circuit Vin Monitor D.U. Vin Waveforms Vout Monitor 10% Vin DD Vout 10% 90% td(on) tr 90% 10% 90% td(off ...
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... Package Dimensions + 0.10 0.3 – 0.05 + 0.1 0.3 – 0.05 + 0.1 0.65 0.65 0.3 – 0.0.5 + 0.2 1.3 – 0.2 + 0.2 2.0 – 0.2 2SK3348 + 0.10 0.16 – 0. 0.1 CMPAK Hitachi Code SC–70 EIAJ JEDEC – Unit ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...