2sk3348 Renesas Electronics Corporation., 2sk3348 Datasheet - Page 4

• Manufacturer Part Number: 2sk3348
• Description: Silicon N Channel Mos Fet High Speed Switching
• Manufacturer: Renesas Electronics Corporation.

2SK3348
4
1.0
0.8
0.6
0.4
0.2
–40
0
5
4
3
2
1
0
Drain to Source Saturation Voltage
Gate to Source Voltage
V
Case Temperature
Static Drain to Source on State
GS
Resistance vs. Temperature
vs. Gate to Source Voltage
2
4V
0
=2.5V
10 mA
50 mA
40
4
10m A,50m A,100mA
100m A
80
6
Tc
I
Pulse Test
D
Pulse Test
= 100 mA
-10m A
V
( °C)
120
GS
8
(V)
I
D
160
10
= -50m A
0.005
0.002
0.001
0.02
0.01
0.05
1.0
1.0
0.5
0.2
0.1
0.2
0.5
0.1
10
2
5
0.01
0.01
Pulse Test
V
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
DS
0.02
Forward Transfer Admittance
0.02
= 10 V
Drain Current I
25 °C
Drain Current
vs. Drain Current
0.05
0.05
V
GS
Tc = –25 °C
= 2.5 V
0.1
0.1
0.2
D
75°C
0.2
I
D
(A)
(A)
0.5
0.5
4 V
1.0
1.0