irfr220-01 NXP Semiconductors, irfr220-01 Datasheet - Page 4
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irfr220-01
Manufacturer Part Number
irfr220-01
Description
Irfr220 N-channel Enhancement Mode Field Effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.IRFR220-01.pdf
(12 pages)
Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08519
Product data
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
Thermal characteristics
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to mounting base as a function of
Z th(j-mb)
pulse duration.
(K/W)
10 -1
10
1
10 -4
Rev. 01 — 14 August 2001
= 0.5
0.02
0.05
0.2
0.1
single pulse
Conditions
mounted on a metal clad substrate;
10 -3
N-channel enhancement mode field effect transistor
10 -2
10 -1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Figure 4
P
t p
1
T
IRFR220
t p (s)
003aaa131
=
t p
T
Value Unit
3
t
10
4 of 12
K/W