EMD12324P Emlsi Inc., EMD12324P Datasheet - Page 42
![no-image](/images/no-image-200.jpg)
EMD12324P
Manufacturer Part Number
EMD12324P
Description
512m 16m X 32 Mobile Ddr Sdram
Manufacturer
Emlsi Inc.
Datasheet
1.EMD12324P.pdf
(44 pages)
- Current page: 42 of 44
- Download datasheet (3Mb)
Power up & Initialization Sequence
VDD
VDDQ
CK
CKB
CKE
COMMAND
DM
A0-A9,
A11,A12
A10
BA0, BA1
DQS
DQ
Notes: 1. PRE = PRECHARGE command, MRS = LOAD MODE REGISTER command, AR = AUTO REFRESH command
2. NOP or DESELECT commands are required for at least 200us.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
LVCMOS HIGH LEVEL
ACT = ACTIVE command, RA = Row address, BA = Bank address
High-Z
High-Z
V
Power-up:
DD
NOP
and CK stable
T=200us
2
t
IS
NOP
t
IH
t
CH
t
CK
t
CL
PRE
t
RP
4
42
AR
t
RFC
4
AR
t
RFC
Register
t
t
t
512M: 16M x 32 Mobile DDR SDRAM
BA0=L
BA1=L
4
IS
CODE
IS
CODE
IS
Load
Mode
MRS
t
t
t
IH
IH
IH
t
MRD
Extended
Register
BA0=H
BA1=L
EMRS
CODE
CODE
4
Mode
t
MRD
4
EMD12324P
ACT
RA
RA
BA
Preliminary
NOP
3
Rev 0.0
NOP
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