EMD12164P Emlsi Inc., EMD12164P Datasheet - Page 10

• Manufacturer Part Number: EMD12164P
• Description: 512m 32m X 16 Mobile Ddr Sdram
• Manufacturer: Emlsi Inc.

Note:
Table 9: Input Setup/Hold Slew Rate
1. This derating table is used to increase t
2. Minimum 5CK of t
3. t
Read preamble
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
AUTO REFRESH to
ACTIVE / AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
ACTIVE bank A to ACTIVE bank b delay
Column address to Column address delay
WRITE recovery time
Auto precharge write recovery + precharge time
Internal write to Read command delay
Self refresh exit to next valid command delay
Exit power down to next valid command delay
CKE min. pulse width(high and low pulse width)
Refresh Period
t
t
AC
AC
AC
(min) value is measured at the high Vdd(1.95V) and cold temperature(-25° C).
(max) value is measured at the low Vdd(1.7V) and hot temperature(85° C).
is measured in the device with half driver strength and under the AC output load condition (Fig.2 in Page 8).
Input Setup/Hold Slew Rate
DAL
Parameter
(V/ns)
1.0
0.8
0.6
(= t
WR
+ t
RP
) is required because it need minimum 2CK for t
IS
/t
IH
CL = 2
CL = 3
in the case where the input slew rate is below 1.0V/ns.
t
Sym-
t
t
t
t
t
RPRE
RPST
t
t
t
t
t
t
t
WTR
bol
t
RCD
RRD
CCD
RAS
RFC
t
DAL
XSR
t
CKE
REF
WR
RC
RP
XP
t
t
WR+
CK
Min
120
0.5
0.9
0.4
42
60
90
18
18
18
1
2
1
1
+t
+100
t
∆t
(ps)
+50
RP
10
IS
0
IS
-60
100,000
Max
1.1
1.1
0.6
64
WR
and minimum 3CK for t
t
t
WR+
CK
22.5
Min
120
0.5
0.9
0.4
45
60
90
18
21
512M: 32M x 16 Mobile DDR SDRAM
1
2
1
2
+t
t
RP
IS
-75
100,000
Max
1.1
1.1
0.6
64
RP
.
Unit
EMD12164P
t
t
t
t
t
t
t
ms
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
+100
∆t
(ps)
+50
Preliminary
0
Note
IH
6
2
Rev 0.0