sth200n55f3-2 STMicroelectronics, sth200n55f3-2 Datasheet - Page 5

• Manufacturer Part Number: sth200n55f3-2
• Description: N-channel 55 V, 1.8 M?, 160 A, H2pak Stripfet? Iii Power Mosfet
• Manufacturer: STMicroelectronics

STH200N55F3-2
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
V
I
t
t
SD
I
d(on)
d(off)
SD
RRM
I
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Q
SD
t
t
t
rr
r
f
rr
(1)
(2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16085 Rev 1
I
I
V
Figure 7
V
R
Figure 2
V
R
Figure 2
SD
SD
DD
DD
DD
G
G
= 4.7 Ω, V
= 160 A, V
= 120 A,di/dt = 100 A/µs
= 4.7 Ω, V
= 35 V, T
= 27.5 V, I
= 27.5 V, I
Test conditions
Test conditions
GS
j
GS
GS
= 150 °C
D
D
= 10 V,
= 60 A
= 10 V,
= 60 A
= 0
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ. Max. Unit
150
110
110
3.5
25
50
60
Max. Unit
160
640
1.5
-
-
nC
ns
A
A
V
A
ns
ns
ns
ns
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