cha3092 United Monolithic Semiconductors, cha3092 Datasheet - Page 2

• Manufacturer Part Number: cha3092
• Description: 20-33ghz Medium Power Amplifier
• Manufacturer: United Monolithic Semiconductors

CHA3092
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V recommended
Absolute Maximum Ratings
Tamb. = 25°C (1)
Id_
(1) These values are representative for pulsed on-wafer measurements that are made without
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 3.5V recommended for up to a max of 3dB gain compression.
(3) Duration < 1s.
Symbol
VSWRout
bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
Ref. : DSCHA30920356 21-Dec.-00
Symbol
VSWRin
Tstg
small signal
Vds
Vgs
Vdg
Pin
Ids
Ta
P1dB
PAE
Vdet
P03
Fop
IP3
∆G
NF
G
Is
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]
Drain bias voltage_small signal (2)
Drain bias current_small signal
Gate bias voltage
Negative Drain Gate voltage (= Vds – Vgs)
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
Operating temperature range
Storage temperature range
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Output power at 3dB gain compression
Input VSWR (1)
Noise figure
Bias current
Pulsed output power at 1dB compression (1)
3
Power added efficiency at saturation
Output VSWR (1)
Detected voltage: at 26GHz @ Pout=20dBm (2)
rd
order intercept point
Parameter
Parameter
20-33GHz Medium Power Amplifier
2/7
Specifications subject to change without notice
Min
20
20
18
20
-55 to +155
-40 to +85
-2 to +0.4
Values
400
+15
4.0
+5
+4
Typ
±1.0
300
22
50
20
23
29
10
1
2.0:1
3.0:1
Max
10.0
400
33
Unit
dBm
dBm
mA
°C
°C
V
V
V
Unit
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
%
V