cha3093c United Monolithic Semiconductors, cha3093c Datasheet
cha3093c
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cha3093c Summary of contents
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... Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband four- stage monolithic medium power amplifier designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process ...
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... Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA30932158 -07-June-02 Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 Parameter Parameter 2/10 United Monolithic Semiconductors S.A.S. CHA3093c Min Typ Max ±0.5 ...
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... United Monolithic Semiconductors S.A.S. CHA3093c S21 mod pha mod dB /° dB -44,50 11,25 -0,06 -45,28 64,07 -0,17 -32,41 -15,70 -0,26 -30,97 -73,10 -0,19 -39,55 -81,72 -0,32 -12,99 -8,19 -0,95 4,59 -92,82 -3,13 14,64 166,69 -6,28 20,56 66,78 -12,44 23,06 -25,87 -11,02 23,87 -67,24 -8,60 24,20 -106,39 -7,90 23,40 -146,58 -10,21 22,98 -173,95 -10,20 22,93 156,61 -10,87 23,05 125,30 -11,82 22,56 96,27 -13,75 21,93 70,69 -13,72 22,19 43,16 -13,95 21,80 16,81 -15,15 21,36 -6,65 -15,78 21,50 -31,90 -15,57 20,88 -56,82 -20,24 20,82 -81,12 -19,36 20,70 -104,79 -18,36 20,47 -129,10 -20,65 20,11 -154,27 -17,69 19,72 -177,11 -18,18 ...
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... Medium Power Amplifier Typical On wafer Power CW Measurements Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA Ref. : DSCHA30932158 -07-June-02 Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 4/10 United Monolithic Semiconductors S.A.S. CHA3093c Specifications subject to change without notice ...
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... Medium Power Amplifier Ref. : DSCHA30932158 -07-June-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 5/10 Specifications subject to change without notice CHA3093c ...
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... Typical IN TEST JIG Power Measurements in temperature Note : Jig losses included (1 dB) Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA Ref. : DSCHA30932158 -07-June-02 Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 6/10 United Monolithic Semiconductors S.A.S. CHA3093c Specifications subject to change without notice ...
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... Medium Power Amplifier Ref. : DSCHA30932158 -07-June-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 7/10 Specifications subject to change without notice CHA3093c ...
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... On wafer power measurements versus output power Ref. : DSCHA30932158 -07-June-02 Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 Vd1 Vg1 Vg 2 8/10 United Monolithic Semiconductors S.A.S. CHA3093c Vd 2,3,4 Vd 2,3,4 OUT Vg 3,4 Vdet Specifications subject to change without notice ...
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... Tel. : +33 (0 Fax : +33 (0 Bonding pad positions. Number Size (x,y) µm Center position (x,y) µ Pickup Pillow 9/10 United Monolithic Semiconductors S.A.S. CHA3093c (Refered to bottom left origin 773 / 689 / 800 / 1237/ 73 Specifications subject to change without notice ...
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... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA30932158 -07-June-02 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 10/10 CHA3093c ...