2pb709axw-series NXP Semiconductors, 2pb709axw-series Datasheet - Page 3
2pb709axw-series
Manufacturer Part Number
2pb709axw-series
Description
2pb709aw Pnp General Purpose Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.2PB709AXW-SERIES.pdf
(8 pages)
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
CHARACTERISTICS
T
Note
1. Pulse test: t
2002 Jun 26
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
c
PNP general purpose transistor
Handbook SC18”.
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
2PB709AQW
2PB709ARW
2PB709ASW
2PB709AQW
2PB709ARW
2PB709ASW
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
note 1
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 2 mA; V
= 100 mA; I
= 1 mA; V
e
= 0; V
3
CB
CB
EB
CONDITIONS
note 1
= 45 V
= 45 V; T
= 5 V
CB
CE
CE
CONDITIONS
B
= 10 V;
= 10 V
= 10 V;
= 10 mA;
j
= 150 C
160
210
290
60
70
80
MIN.
VALUE
625
Product specification
260
340
460
5
2PB709AW
10
5
10
500
MAX.
UNIT
K/W
nA
nA
mV
pF
MHz
MHz
MHz
A
UNIT