bcw29-bcw30 NXP Semiconductors, bcw29-bcw30 Datasheet - Page 2

• Manufacturer Part Number: bcw29-bcw30
• Description: Bcw29; Bcw30 Pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Jan 13
BCW29
BCW30
BCW29
BCW30
V
V
V
I
I
I
P
T
T
T
C
CM
BM
NUMBER
SYMBOL
stg
j
amb
Low current (max. 100 mA)
Low voltage (max. 32 V).
General purpose switching and amplification.
CBO
CEO
EBO
tot
PNP general purpose transistors
TYPE
* = t : Made in Malaysia.
* = W : Made in China.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
plastic surface mounted package; 3 leads
MARKING CODE
C1*
C2*
(1)
open emitter
open base; I
open collector
T
amb
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
25 C
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline SOT23 and symbol.
Top view
C
= 2 mA
base
emitter
collector
1
3
DESCRIPTION
BCW29; BCW30
65
65
MIN.
2
MAM256
Product specification
250
+150
150
+150
1
32
32
5
100
200
200
MAX.
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
C
C
C
UNIT