upc2713t Renesas Electronics Corporation., upc2713t Datasheet

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upc2713t

Manufacturer Part Number
upc2713t
Description
1.2 Ghz Low Noise Wide Band Amplifier Silicon Bipolar Monolithic Integrated Circuit
Manufacturer
Renesas Electronics Corporation.
Datasheet

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DESCRIPTION
The UPC2713T is a Silicon Monolithic integrated circuit manu-
factured using the NESAT III process. This device is suitable
for applications which require high gain and wide-band opera-
tion. It is designed for low cost gain stages in cellular radios,
GPS receivers, DBS tuners, PCN, and test/measurement
equipment.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
FEATURES
• FREQUENCY RESPONSE: 1.5 GHz
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
ELECTRICAL CHARACTERISTICS
SYMBOLS
CHANGE OVER TEMPERATURE
RL
ISOL
P
P
RL
R
I
G
NF
CC
f
SAT
G
1dB
G
U
OUT
TH
S
IN
S
T
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
Gain Flatness, f = 0.1 0.8 GHz
Saturated Output Power
Output Power at 1dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
PARAMETERS AND CONDITIONS
U
is 3 dB down from the gain at 0.1 GHz)
PACKAGE OUTLINE
PART NUMBER
WIDE-BAND AMPLIFIER
1.5 GHz SILICON MMIC
(T
A
= 25 C, f = 0.5 GHz, V
CC
UNITS
dB/ C
dBm
dBm
GHz
mA
C/W
dB
dB
dB
dB
dB
= 5 V)
35
30
25
20
California Eastern Laboratories
0
GAIN vs. FREQUENCY
MIN
0.9
26
10
35
Frequency, f (GHz)
9
4
6
0.5
UPC2713T
UPC2713T
-0.016
1.0
T06
TYP
1.2
3.2
12
29
13
40
0.8
-4
7
9
1.5
MAX
200
4.5
15
33

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upc2713t Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2713T is a Silicon Monolithic integrated circuit manu- factured using the NESAT III process. This device is suitable for applications which require high gain and wide-band opera- tion designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/measurement equipment ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Input Power IN P Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent ...

Page 3

... IN NOISE FIGURE vs. FREQUENCY 0.5 1.0 Frequency, f (GHz 5.0V CC 1 1.5 UPC2713T POWER vs. FREQUENCY 10 P SAT 1dB -10 -15 0 0.5 1.0 1.5 Frequency, f (GHz) X: Typical SSB Third Order Intercept Point OUTPUT POWER vs. INPUT POWER AND TEMPERATURE 85˚ ...

Page 4

... TYPICAL SCATTERING PARAMETERS UPC2713T FREQUENCY S 11 (GHz) MAG ANG 0.10 0.350 -21.8 0.20 0.290 -33.1 0.30 0.243 -41.7 0.40 0.207 -47.3 0.50 0.185 -50.5 0.60 0.176 -54.0 0.70 0.161 -57.5 0.80 0.148 -60.2 0.90 0.127 -63.9 1.00 0.111 -62.9 1.10 0.097 -56.5 1.20 0.095 -48.2 1.30 0.098 -40.1 1.40 0.110 -35.7 1.50 0.129 -34.6 1.60 0.145 -36.2 1.70 0.161 -40.0 1.80 0.179 -44.7 1.90 0.191 -50.3 2.00 0.197 -56.1 Note factor calculations ∆ ...

Page 5

... ORDERING INFORMATION V CC Embossed Tape wide. OUT LEAD CONNECTIONS 3 GND INPUT 2. GND 3. GND 4 5 -0.05 6 0.3 +0.10 RECOMMENDED P.C.B. LAYOUT 0.13 0.1 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS PART NUMBER QTY UPC2713T-E3 3K/Reel (Top View) (Bottom View OUTPUT 5. GND 3. 1.0 1.0 MIN MIN 3 2 ...

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