upc2713t Renesas Electronics Corporation., upc2713t Datasheet - Page 2

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upc2713t

Manufacturer Part Number
upc2713t
Description
1.2 Ghz Low Noise Wide Band Amplifier Silicon Bipolar Monolithic Integrated Circuit
Manufacturer
Renesas Electronics Corporation.
Datasheet

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ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result in
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T
TYPICAL PERFORMANCE CURVES
SYMBOLS
permanent damage.
T
V
T
P
P
STG
CC
OP
IN
T
35
25
20
10
20
40
30
10
15
35
30
25
15
5
0
0
0.1
Supply Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
INSERTION GAIN vs. FREQUENCY
NF
CIRCUIT CURRENT vs. VOLTAGE
Gp
V
CC
PARAMETERS
1
V
= 4.5 V
CC
Supply Voltage, V
NOISE FIGURE AND
= 4.5 V
Frequency, f (GHz)
V
CC
2
0.3
= 5.5 V
V
V
CC
CC
= 5.0 V
3
= 5.5 V
V
CC
= 5.0 V
4
CC
UNITS
(V)
1.0
dBm
mW
V
C
C
5
1
A
3.0
-55 to +150
= +85 C).
RATINGS
-40 to +85
(T
6
10
8
6
2
A
4
1.0
280
1.4
1.2
(T
0.8
0.4
+10
0.6
0.2
0
= 25 C)
6
A
2
= 25 C)
TEST CIRCUIT
IN
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
50 Ω
V
CC
-20
-30
-40
-10
40
30
20
10
35
25
15
0
5
0
Supply Voltage
-60
0.1
1000 pF
C 1
PARAMETER
Operating Temperature, T
RETURN LOSS vs. FREQUENCY
-40
CIRCUIT CURRENT vs.
-20
1
RL
TEMPERATURE
1000 pF
Frequency, f (GHz)
OUT
C 3
0.3
0
RL
IN
V
6
CC
20
2, 3, 5
1000 nH
40
UNITS
4
V
60
OP
1.0
1000 pF
V
*
CC
( C)
*
L
C 2
80
= 5.0V
MIN
4.5
100
2.0
TYP MAX
5.0
50 Ω
5.5
OUT

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