mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 65
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
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Figure 29:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
WRITE-to-READ – Uninterrupting
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to the same device. However, the READ and WRITE
5. A10 is LOW with the WRITE command (auto precharge is disabled).
t
commands may be to different devices, in which case
command could be applied earlier.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b
b = data-in for column b; D
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+2
b+1
D
D
IN
IN
b+2
NOP
D
T2
IN
b+3
b+2
D
D
IN
IN
T2n
b+3
D
IN
b+3
D
65
IN
OUT
NOP
T3
t
WTR
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
READ
Col n
T4
Don’t Care
t
WTR is not required and the READ
CL = 2
CL = 2
CL = 2
T5
NOP
T5n
Mobile DDR SDRAM
Transitioning Data
©2007 Micron Technology, Inc. All rights reserved
D
D
D
OUT
OUT
OUT
n
n
n
T6
NOP
D
n + 1
D
n + 1
D
n + 1
OUT
OUT
OUT
Operations
T6n