mt4htf6464ay-80e Micron Semiconductor Products, mt4htf6464ay-80e Datasheet - Page 10

• Manufacturer Part Number: mt4htf6464ay-80e
• Description: 128mb, 256mb, 512mb X64, Sr 240-pin Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 12:
PDF: 09005aef80ed6fda/Source: 09005aef80ed6fb0
HTF4C16_32_64x64A.fm - Rev. F 4/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
t
valid commands; Address bus inputs are switching; Data pattern is same as
I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
bus inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching; Data
bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current:
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
DD
RC =
RAS =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
4W
t
t
t
t
RP (I
DD
RC (I
CK (I
CK (I
t
t
t
OUT
OUT
RAS MIN (I
RAS MAX (I
RAS MAX (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, C = CL (I
DD
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the
1Gb (64 Meg x 16) component data sheet
); CKE is LOW; Other control and address
),
t
t
RAS =
RC =
DD
DD
), AL = 0;
DD
DD
),
t
),
),
DD
RC (I
t
t
RAS MIN (I
RCD =
t
t
DD
RP =
RP =
t
CK =
Specifications and Conditions (Die Revision A) – 512MB
), AL = 0;
DD
t
CK =
),
t
t
RP (I
RP (I
t
t
RCD (I
CK (I
t
RRD =
DD
t
DD
DD
DD
CK (I
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
DD
t
DD
); CKE is HIGH, S# is HIGH between
CK =
DD
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
), AL =
), AL = 0;
); REFRESH command at every
t
RRD (I
); CKE is HIGH, S# is HIGH between
DD
t
),
CK (I
t
t
RCD (I
RC =
DD
DD
t
),
CK =
),
t
t
t
RCD =
RC (I
CK =
DD
t
t
RAS =
CK =
t
CK =
) - 1 ×
t
CK (I
DD
t
CK (I
t
t
),
t
RCD (I
OUT
CK (I
CK =
t
t
DD
t
CK (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
RAS MAX (I
CK =
t
10
CK (I
DD
),
= 0mA;
DD
t
),
DD
DD
CK (I
t
DD
),
CK (I
); CKE is
); CKE is
);
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
);
);
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1,260
1,280
1,120 1,080 1,000
1,760 1,400 1,360 1,320
-80E/
-800
600
700
300
320
180
340
28
56
28
Electrical Specifications
©2003 Micron Technology, Inc. All rights reserved.
-667
540
520
260
280
160
300
800
880
28
56
28
-53E
440
480
180
200
140
240
720
720
28
56
28
-40E Units
440
460
160
160
140
220
640
640
960
28
56
28
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA