m29w400b-100za6tr STMicroelectronics, m29w400b-100za6tr Datasheet - Page 61

• Manufacturer Part Number: m29w400b-100za6tr
• Description: 64 Mbit 8mb X8 Or 4mb X16, Multiple Bank, Boot Block 3v Supply Flash Memory
• Manufacturer: STMicroelectronics

M29DW640F
Table 27.
1Bh
1Ch
1Dh
1Eh
x16
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
CFI Query System Interface Information
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00B5h
00C5h
000Ah
0027h
0036h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
Typical timeout per single Byte/Word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for Byte/Word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
Common Flash Interface (CFI)
n
n
n
ms
times typical
times typical
n
n
times typical
µs
n
µs
256 µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
NA
NA
NA
NA
1s
8s
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