m29w400b-100za6tr STMicroelectronics, m29w400b-100za6tr Datasheet - Page 62

• Manufacturer Part Number: m29w400b-100za6tr
• Description: 64 Mbit 8mb X8 Or 4mb X16, Multiple Bank, Boot Block 3v Supply Flash Memory
• Manufacturer: STMicroelectronics

Common Flash Interface (CFI)
Table 28.
1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
62/74
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
x16
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
Address
Device Geometry Definition
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
x8
007Dh
0017h
0002h
0000h
0003h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of Bytes in multi-Byte program or page = 2
Number of Erase Block Regions
regions containing contiguous Erase Blocks of the same size.
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 Byte
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 007Dh+1
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 Byte
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 Bytes
n
in number of Bytes
Description
(1)
. It specifies the number of
n
M29DW640F
64 KBytes
8 MBytes
8 KBytes
8 KBytes
x8, x16
Async.
Value
126
8
3
8
8