mm908e622 Freescale Semiconductor, Inc, mm908e622 Datasheet - Page 11

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mm908e622

Manufacturer Part Number
mm908e622
Description
Mm908e622 Integrated Quad Half-bridge, Triple High-side And Ec Glass Driver With Embedded Mcu And Lin For High End Mirror
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Table 3. Static Electrical Characteristics (continued)
chip. Characteristics noted under conditions 9.0 V
noted reflect the approximate parameter mean at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
High-Side Output HS1
High-Side Outputs HS2 and HS3
Notes
Switch On Resistance
Overcurrent Shutdown
Overcurrent Shutdown blanking time
Current to Voltage Ratio
High-Side Switching Frequency
High-Side Free-Wheeling Diode Forward Voltage
Leakage Current
Switch On Resistance
Overcurrent Shutdown
Overcurrent Shutdown blanking time
High-Side Switching Frequency
High-Side Free-Wheeling Diode Forward Voltage
Leakage Current
15.
16.
17.
Current to Voltage Ratio
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
T
V
T
T
V
T
J
J
J
J
ADOUT
ADOUT
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
This parameter is guaranteed by process monitoring but is not production tested.
This parameter is guaranteed only if correct trimming was applied.
The high-side HS3 can be only used for resistive loads.
[V] / I
[V] / I
LOAD
LOAD
LOAD
LOAD
HS
HS
[A], (measured and trimmed I
[A], (measured and trimmed I
= 1.0 A
= 1 A
= 1.0 A
= 1 A
(16)
(16)
Characteristic
(15)
(15)
(17)
(15)
(15)
HS
HS
= 2 A)
= 2 A)
A
V
= 25°C under nominal conditions unless otherwise noted.
SUP
16 V, -40°C
CR
R
CR
R
DS(ON)-HS23
DS(ON)-HS1
Symbol
I
f
f
I
I
I
HSOC23
RATIOHS23
PWMHS
PWMHS
T
RATIOHS1
LeakHS
LeakHS
HSOC1
V
V
t
t
OCB
OCB
J
HSF
HSF
125°C unless otherwise noted. Typical values
0.84
1.16
Min
6.0
3.6
Static Electrical Characteristics
<0.2
1.66
<0.2
Typ
185
440
4-8
4-8
1.2
0.9
0.9
Max
1.56
2.16
225
500
9.0
5.6
25
10
25
10
908E622
Unit
kHz
kHz
mΩ
V/A
mΩ
V/A
µA
µA
µs
µs
A
V
A
V
11

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