mc68hc908rf2 Freescale Semiconductor, Inc, mc68hc908rf2 Datasheet - Page 31

• Manufacturer Part Number: mc68hc908rf2
• Description: M68hc08 Microcontrollers Microcontroller / Transmitter
• Manufacturer: Freescale Semiconductor, Inc

2.5.3 FLASH 2TS Erase Operation
MC68HC908RF2 — Rev. 4.0
MOTOROLA
NOTE:
Use this step-by-step procedure to erase a block of FLASH 2TS memory. Refer to
14.12 Memory Characteristics
algorithm.
While these operations must be performed in the order shown, other unrelated
operations may occur between the steps.
Table 2-3
operation.
In step 3 of the erase operation, the cared addresses are latched and used
to determine the location of the block to be erased. For instance, with
BLK0 = BLK1 = 0, writing to any FLASH 2TS address in the range $7800 to $78F0
will enable the erase of all FLASH memory.
1. Set the ERASE, BLK0, BLK1, and FDIV0 bits in the FLASH 2TS control
2. Ensure target portion of array is unprotected by reading the block protect
3. Write to any FLASH 2TS address with any data within the block address
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the HVEN bit.
7. Wait for a time, t
8. Clear the ERASE bit.
9. After a time, t
register. Refer to
sizes.
register at address $FFF0. Refer to
and
range desired.
Freescale Semiconductor, Inc.
For More Information On This Product,
shows the various block sizes which can be erased in one erase
2.5.6 FLASH 2TS Block Protect Register
BLK1
0
0
1
1
Go to: www.freescale.com
HVD
Erase
Kill
, the memory can be accessed in read mode again.
Table 2-2
Table 2-3. Erase Block Sizes
BLK0
, for the high voltages to dissipate.
0
1
0
1
Memory
.
for a detailed description of the times used in this
for FDIV settings and to
Block Size, Addresses Cared
2.5.5 FLASH 2TS Block Protection
One-half array: 1 Kbyte
Eight rows: 64 bytes
Full array: 2 Kbytes
Single row: 8 bytes
for more information.
Table 2-3
FLASH 2TS Memory
for block
Data Sheet
Memory
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