mc68hc908bd48 Freescale Semiconductor, Inc, mc68hc908bd48 Datasheet - Page 57

• Manufacturer Part Number: mc68hc908bd48
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

4.5 FLASH Block Erase Operation
MC68HC908BD48
Freescale Semiconductor
—
Rev. 2.1
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Use the following procedure to erase a block (512 bytes) of FLASH
memory:
This read/write bit configures the memory for erase operation. ERASE
is interlocked with the PGM bit such that both bits cannot be equal to
1 or set to 1 at the same time.
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the block address
3. Wait for a time, t
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Setting this read/write bit configures the 48,128 bytes FLASH array
for mass erase operation.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Mass Erase operation not selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
register.
range desired.
FLASH Memory
nvs
(min. 5µs)
FLASH Memory
Data Sheet
57