tle8262-2e Infineon Technologies Corporation, tle8262-2e Datasheet - Page 16

• Manufacturer Part Number: tle8262-2e
• Description: Universal System Basis Chip Hermes
• Manufacturer: Infineon Technologies Corporation

5
5.1
Absolute Maximum Ratings
T
(unless otherwise specified)
Pos.
Voltages
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.1.6
5.1.7
5.1.8
5.1.9
5.1.10 Voltage at Limp Home (LH, LH_SI pin)
5.1.11 Logic Voltages Input Pin (SDI, CLK,
5.1.12 Logic Voltage Output PIN (SDO, RO,
5.1.13 LIN Line Bus Input Voltages
Currents
5.1.14 Reverse current on pin Vs
Temperatures
5.1.15 Junction Temperature
5.1.16 Storage Temperature
ESD Susceptibility
5.1.17 Electrostatic Discharge Voltage at BusX
5.1.18 Electrostatic Discharge Voltage
5.1.19 Electrostatic Discharge CDM
1) Not subject to production test; specified by design
2) ESD susceptibility Human Body Model “HBM” according to JESD22-A114
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
Data Sheet
j
= -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
Parameter
Supply Voltage
Supply Voltage Slew Rate
Regulator Output Voltage
CAN Bus Voltage (CANH, CANL)
Differential Voltage CANH, CANL, SPLIT
Input Voltage at V
Voltage at SPLIT, WK
Voltage at LH_PL/Test
Voltage at V
CSN, TxDLINx, TxDCAN)
INT, RxDLINx, RxDCAN)
CANH, CANL, SPLIT versus GND
Corner Pins (Pin 1, 18, 19, 36)
Electrostatic Discharge CDM
General Product Characteristics
Absolute Maximum Ratings
cc3base
CCHSCAN
, V
cc3shunt,
1)
V
cc3REF
Symbol
V
dV
V
V
V
V
V
V
V
V
V
V
I
T
T
V
V
V
_C
V
VS
j
stg
S
cc1µC/2/3
CANH/L
diffESD
CCHSCAN
SPLIT
Test,max
cc3base
LH
I
DRI,RD
ESD
ESD
ESD_CDM
ESD_CDM
S/dt
16
Min.
-0.3
-0.5
-0.3
-27
-40
-0.3
-27
-0.3
-0.3
-0.3
-0.3
-0.3
-500
-40
-55
-6
-2
-750
-500
Limit Values
Max.
40
5
5.5
40
40
5.5
40
40
40
40
V
0.3V
V
0.3V
–
150
150
6
2
750
500
CC1µC
CC1µC
General Product Characteristics
+
+
Unit Test Conditions
V
V/µs –
V
V
V
V
V
V
V
V
V
V
mA
°C
°C
kV
kV
V
V
–
–
–
CANH-CANL<|40 V|;
CANH-SPLIT<|40 V|
CANL-SPLIT<|40 V|;
–
–
–
–
–
0 V <
0 V <
0 V <
0 V <
–
V
–
–
2)
1.5 kΩ)
2)
1.5 kΩ)
3)
3)
Rev. 1.0, 2009-05-26
S
HBM (100 pF via
HBM (100 pF via
<
V
V
V
V
V
CC
TLE8262-2E
S
CC1µC
S
CC1µC
< 28 V
< 28 V
< 5.5 V
< 5.5 V