mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 3
mf1011b900y
Manufacturer Part Number
mf1011b900y
Description
Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.MF1011B900Y.pdf
(12 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 18
handbook, halfpage
V
V
V
V
I
P
T
T
T
CM
stg
j
sld
CBO
CES
CEO
EBO
tot
Microwave power transistor
t
SYMBOL
P tot
p
(W)
= 10 s;
1800
1200
600
0
50
= 1%.
Fig.2 Power derating curve.
0
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
50
PARAMETER
100
150
T
mb
MLC721
( C)
o
200
open emitter
R
open base
open collector
t
T
t
p
mb
BE
= 10 s; = 1%
10 s; note 1
3
< 75 C; t
= 0
CONDITIONS
p
10 s;
1%
MF1011B900Y
MIN.
65
Product specification
65
65
15
3
50
1750
+200
200
235
MAX.
V
V
V
V
A
W
UNIT
C
C
C