bgy685ad NXP Semiconductors, bgy685ad Datasheet - Page 3

no-image

bgy685ad

Manufacturer Part Number
bgy685ad
Description
Hybrid Catv Amplifier Module
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
CHARACTERISTICS
Table 1 Bandwidth 40 to 600 MHz; V
Notes
1. V
2. Measured according to DIN45004B:
3. The module normally operates at V
2001 Oct 22
G
SL
FL
S
S
S
CTB
X
CSO
d
V
F
I
tot
2
11
22
21
mod
o
600 MHz, 18.5 dB gain push-pull amplifier
SYMBOL
p
f
measured at f
f
f
f
measured at f
p
p
q
r
p
= 599.25 MHz; V
= 55.25 MHz; f
= 590.25 MHz; V
= 597.25 MHz; V
= V
q
= 44 dBmV;
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
q
q
q
= 541.25 MHz;
r
p
q
= 596.5 MHz.
= V
= V
= V
f
r
= 588.25 MHz.
PARAMETER
o
o
o
;
6 dB;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
case
= 30 C; Z
f = 50 MHz
f = 600 MHz
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 600 MHz
f = 50 MHz
85 channels flat;
V
measured at 595.25 MHz
85 channels flat;
V
measured at 55.25 MHz
85 channels flat;
V
measured at 596.5 MHz
note 1
d
f = 50 MHz
f = 600 MHz
note 3
im
o
o
o
= 44 dBmV;
= 44 dBmV;
= 44 dBmV;
= 60 dB; note 2
3
CONDITIONS
S
= Z
L
= 75
18
18.75
0.2
20
19
18
20
19
18
62
45
MIN.
19
2.2
+45
6
8
250
Product specification
0.3
62
58
60
70
BGY685AD
MAX.
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
mA
UNIT

Related parts for bgy685ad