bgd702mi NXP Semiconductors, bgd702mi Datasheet - Page 3

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bgd702mi

Manufacturer Part Number
bgd702mi
Description
Catv Amplifier Module
Manufacturer
NXP Semiconductors
Datasheet
Notes
1. f
Philips Semiconductors
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; V
2. Measured according to DIN45004B:
3. The module normally operates at V
1998 Mar 13
G
SL
FL
S
S
S
CTB
X
CSO
d
V
F
I
tot
2
11
22
21
mod
o
CATV amplifier module
SYMBOL
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 749.25 MHz; V
= 55.25 MHz; V
= 691.25 MHz; V
= 740.25 MHz; V
= 747.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
r
q
p
q
= 44 dBmV;
= 746.5 MHz.
= V
PARAMETER
= 44 dBmV;
= V
= V
f
r
= 738.25 MHz.
o
o
o
;
6 dB;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
mb
f = 50 MHz
f = 750 MHz
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 50 MHz
110 channels flat; V
measured at 745.25 MHz
110 channels flat; V
measured at 55.25 MHz
110 channels flat; V
measured at 746.5 MHz
note 1
d
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
note 3
im
= 35 C; Z
= 60 dB; note 2
3
CONDITIONS
S
= Z
L
o
o
o
= 75
= 44 dBmV;
= 44 dBmV;
= 44 dBmV;
18
18.5
0.2
20
19
18
17
16
20
19
18
17
16
61
45
MIN.
19
2
+45
5.5
6.5
6.5
7
8.5
435
Product specification
0.5
58
62
58
68
BGD702MI
MAX.
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
UNIT

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