bgd906mi NXP Semiconductors, bgd906mi Datasheet - Page 5

• Manufacturer Part Number: bgd906mi
• Description: Catv Amplifier Modules
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 21.5 dB gain power doubler amplifier
Z
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 .
Fig.2
Z
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 .
Fig.4
S
S
CTB
CSO
(dB)
(dB)
= Z
= Z
50
60
70
80
90
50
60
70
80
90
o
o
L
L
.
.
0
= 75 ; V
= 75 ; V
0
(2)
(3)
(4)
Composite triple beat as a function of
frequency under tilted conditions.
Composite second order distortion as a
function of frequency under tilted
conditions.
B
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
200
200
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
(1)
(1)
(1)
(2)
(3)
(4)
600
600
f (MHz)
f (MHz)
MGS661
MGS663
(2)
(3)
(4)
(2)
(1)
(3)
(4)
800
800
52
(dBmV)
48
44
40
36
52
(dBmV)
48
44
40
36
V o
V o
5
handbook, halfpage
Z
tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
(1) V
(2) Typ. +3 .
Fig.3
X mod
S
(dB)
= Z
50
60
70
80
90
o
L
.
0
= 75 ; V
(2)
(3)
(4)
Cross modulation as a function of frequency
under tilted conditions.
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
200
(3) Typ.
(4) Typ. 3 .
BGD906; BGD906MI
400
(1)
(1)
Product specification
600
f (MHz)
MGS662
(2)
(3)
(4)
800
52
(dBmV)
48
44
40
36
V o