is42s16800al-7tli Integrated Silicon Solution, Inc., is42s16800al-7tli Datasheet

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is42s16800al-7tli

Manufacturer Part Number
is42s16800al-7tli
Description
128-mbit Low-power Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
IS42S81600AL, IS42LS81600AL
IS42S16800AL, IS42LS16800AL
IS42S32400AL, IS42LS32400AL
FEATURES
• Clock frequency: 133, 100, MHz
• Fully synchronous; all signals referenced to a
• Internal bank for hiding row access/precharge
• Power supply
• LVTTL interface
• Programmable burst length
• Extended Mode Register
• Programmable Power Reduction Feature by
• Auto Precharge and Auto refresh Modes
• Temp. Compensated Self Refresh.
• Self Refresh Mode: Standard and Low-Power
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
• Burst termination by burst stop and Precharge
• Industrial Temperature Availability
• Lead-free Availability
16Meg x 8, 8Meg x16 & 4Meg x 32
128-MBIT LOW-POWER
SYNCHRONOUS DRAM
Integrated Silicon Solution, Inc. — www.issi.com —
PRELIMINARY
09/18/03
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
positive clock edge
IS42LS81600AL
IS42LS16800AL
IS42LS32400AL
IS42S81600AL
IS42S16800AL
IS42S32400AL
– (1, 2, 4, 8, full page)
partial array activation during Self-Refresh
operations capability
command
INFORMATION,
V
2.5V 1.8V (2.5V tolerant)
2.5V 1.8V (2.5V tolerant)
2.5V 1.8V (2.5V tolerant)
3.3V 3.3V
3.3V 3.3V
3.3V 3.3V
DD
Rev. 00A
V
DDQ
1-800-379-4774
KEY TIMING PARAMETERS
OVERVIEW
ISSI
high-speed data transfer using pipeline architecture. All
inputs and outputs signals refer to the rising edge of the
clock input. The 128Mb SDRAM is organized as follows.
IS42LS81600AL
IS42S81600AL
4M x8x4 Banks
54-Pin TSOPII
Parameter
Clk Cycle Time
Clk Frequency
Access Time from Clock
's 128Mb Low - Power Synchronous DRAM achieves
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
PRELIMINARY INFORMATION
IS42LS16800AL
IS42S16800AL
2M x16x4 Banks
54-ball FBGA
54-pin TSOPII
SEPTEMBER 2003
ISSI
133
100
5.4
-7
10
7
6
IS42LS32400AL
IS42S32400AL
1M x32x4 Banks
90-ball FBGA
86-pin TSOPII
-10
100
100
10
10
7
9
Unit
Mhz
Mhz
ns
ns
ns
ns
®
1

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is42s16800al-7tli Summary of contents

Page 1

... IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • ...

Page 2

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL DEVICE OVERVIEW The 128Mb Low - Power SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 2.5V V and 1. 3.3VV and 3. DDQ DD systems containing 134,217 ,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. (Each 33,554,432-bit bank is organized as 4,096 rows by 512 columns by 16 bits ...

Page 3

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN CONFIGURATIONS 54-Pin TSOP - Type II for x8 PIN DESCRIPTIONS A0-A11 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address I/O0 to I/O15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command ...

Page 4

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN CONFIGURATIONS 54-Ball FBGA for x16 1 A Vss B I/O14 C I/O12 D I/O10 E I/O8 F DQMH G NC/A12 Vss PIN DESCRIPTIONS A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address I/O0 to I/O15 Data I/O CLK System Clock Input ...

Page 5

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN CONFIGURATIONS 54-Pin TSOP - Type II for x16 PIN DESCRIPTIONS A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address I/O0 to I/O15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command ...

Page 6

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN CONFIGURATIONS 86-Pin TSOP - Type II for x32 V I/ I/O1 I/ I/O3 I/ I/ DQM0 WE CAS RAS CS A11 BA0 BA1 A10 DQM2 V NC I/O16 V SS I/O17 I/O18 V DD I/O19 I/O20 V SS I/O21 I/O22 V DD I/O23 V PIN DESCRIPTIONS ...

Page 7

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN CONFIGURATIONS 90-Ball FBGA for x32 1 A I/O26 B I/O28 VDDQ C VssQ D VssQ E VDDQ F Vss DQM3 CLK K DQM1 L VDDQ M VssQ N VssQ P I/O11 VDDQ R I/O13 PIN DESCRIPTIONS A10-A11 Row Address Input A0-A7 Column Address Input BA0, BA1 ...

Page 8

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PIN FUNCTIONS Symbol Type A0-A11 Input Pin BA0, BA1 Input Pin CAS Input Pin CKE Input Pin CLK Input Pin CS Input Pin DQML, Input Pin DQMH DQM0-DQM3 Input Pin DQM Input Pin RAS Input Pin ...

Page 9

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL GENERAL DESCRIPTION READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0-A9 (x8); A0-A8 (x16); A0-A7 (x32) provides the starting column location. When A10 is HIGH, this command func- tions as an AUTO PRECHARGE command ...

Page 10

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL COMMAND TRUTH TABLE CKE Function Symbol n – 1 Device deselect H No operation H Burst stop H Read H Read with auto precharge H Write H Write with auto precharge H Bank activate H Precharge select bank H Precharge all banks H Mode register set H Extended mode reg set ...

Page 11

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CKE TRUTH TABLE Current State /Function Activating Clock suspend mode entry Any Clock suspend mode Clock suspend mode exit Auto refresh command Idle Self refresh entry Idle Power down entry Idle Deep power down entry ...

Page 12

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL FUNCTIONAL TRUTH TABLE RAS RAS RAS RAS CAS RAS CAS CAS CAS CAS Idle Row Active ...

Page 13

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL FUNCTIONAL TRUTH TABLE Continued RAS RAS RAS CAS RAS RAS CAS CAS CAS CAS Read with auto H × × Precharging Precharge Precharging ...

Page 14

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL FUNCTIONAL TRUTH TABLE Continued RAS CAS RAS RAS CAS CAS CAS CS CS RAS RAS CAS Write Recovering H × × Write Recovering H × ...

Page 15

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL FUNCTIONAL TRUTH TABLE Continued: Notes: 1. All entries assume that CKE is active (CKEn-1=CKEn=H). 2. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the state of that bank. 3. Illegal if tRCD is not satisfied. 4. Illegal if tRAS is not satisfied. ...

Page 16

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage DD MAX V Maximum Supply Voltage for Output Buffer DDQ MAX V Input Voltage IN V Output Voltage OUT P Allowable Power Dissipation D MAX I Output Shorted Current CS T Operating Temperature OPR T Storage Temperature ...

Page 17

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL DC ELECTRICAL CHARACTERISTICS Input Leakage Current IL I Output Leakage Current OL V Output High Voltage Level OH V Output Low Voltage Level OL I Operating Current (1,2) DD1 I Precharge Standby Current DD2P ...

Page 18

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL DC ELECTRICAL CHARACTERISTICS Self-Refresh Current DD6 PASR=000 (full) PASR=001 (2BK) PASR=010 (1BK) PASR=101 (1/2BK) PASR=110 (1/4BK) I Self-Refresh Current DD6 PASR=000 (full) PASR=001 (2BK) PASR=010 (1BK) PASR=101 (1/2BK) PASR=110 (1/4BK) ...

Page 19

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL AC ELECTRICAL CHARACTERISTICS Clock Cycle Time CK3 t CK2 (4) t Access Time From CLK AC3 t AC2 t CLK HIGH Level Width CHI t CLK LOW Level Width CL t Output Data Hold Time OH3 t OH2 t Output LOW Impedance Time ...

Page 20

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t READ/WRITE command to READ/WRITE command CCD t CKE to clock disable or power-down entry mode CKED t CKE to clock enable or power-down exit setup mode PED t DQM to input data delay ...

Page 21

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL AC TEST CONDITIONS (V Input Load t CHI 1.4V 0.9V CLK 0. 1.4V INPUT 0.9V 0. OUTPUT 0.9V AC TEST CONDITIONS Parameter AC High Level Input Voltage/Low Level Input Voltage Input Rise and Fall Times Input Timing Reference Level Output Timing Measurement Reference Level Integrated Silicon Solution, Inc. — ...

Page 22

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL AC TEST CONDITIONS (V Input Load t CHI 3.0V 1.5V CLK 3.0V INPUT 1. OUTPUT 1.5V AC TEST CONDITIONS Parameter AC High Level Input Voltage/Low Level Input Voltage Input Rise and Fall Times Input Timing Reference Level Output Timing Measurement Reference Level ...

Page 23

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL FUNCTIONAL DESCRIPTION The 128Mb Low - Power SDRAMs are quad-bank DRAMs which operate at 2.5V or 3.3V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits. ...

Page 24

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL REGISTER DEFINITION Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION ...

Page 25

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL REGISTER DEFINITION Extended Mode Register The mode register is used to define the specific SDRAM low-power features. This includes the Temperature Com- pensated Self Refresh (TCSR) and Partial Array Self Refresh (PASR) as shown in EXTENDED MODE REGIS- TER DEFINITION. ...

Page 26

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL INITIALIZE / LOAD MODE REGISTER AND EXTEND MODE REGISTER T0 T1 Tn+1 t CLK CKS CKH CKE CMS CMH CMS CMH CMS COMMAND NOP PRECHARGE REFRESH DQM/DQML DQMH/DQM0-3 A0-A9, A11 ALL BANKS A10 BA0, BA1 HighZ ...

Page 27

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL AUTO-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/DQML DQMH/DQM0-3 A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK ( High-Z Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 28

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL SELF-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/DQML DQMH/DQM0-3 A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Precharge all active banks CKS ...

Page 29

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL BURST LENGTH Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length deter- mines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst ...

Page 30

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge ...

Page 31

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CHIP OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank) ...

Page 32

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READS READ bursts are initiated with a READ command, as shown in the READ COMMAND diagram. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst ...

Page 33

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL same bank. The PRECHARGE command should be is- sued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in the READ to PRECHARGE diagram for each possible CAS latency; data element either the last of a burst of four or the last desired of a longer burst ...

Page 34

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL RW1 - READ TO WRITE CLK DQM COMMAND ADDRESS DQ RW2 - READ TO WRITE WITH EXTRA CLOCK CYCLE T0 CLK DQM COMMAND READ BANK, ADDRESS COL READ NOP NOP BANK, COL NOP NOP NOP t HZ ...

Page 35

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CONSECUTIVE READ BURSTS T0 CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com — PRELIMINARY INFORMATION Rev. 00A 09/18/ ...

Page 36

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL RANDOM READ ACCESSES T0 CLK COMMAND READ BANK, ADDRESS COL CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - READ READ READ BANK, BANK, BANK, COL b COL m COL OUT OUT CAS Latency - 2 ...

Page 37

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ BURST TERMINATION T0 CLK COMMAND READ BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com — PRELIMINARY INFORMATION Rev. 00A 09/18/ ...

Page 38

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ALTERNATING BANK READ ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK 0 DQ ...

Page 39

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ - FULL-PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP READ t CMS DQM/DQML DQMH/DQM0 A0-A9, A11 ROW COLUMN A10 ROW BA0, BA1 BANK ...

Page 40

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 ...

Page 41

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ to PRECHARGE T0 T1 CLK COMMAND READ NOP BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com — PRELIMINARY INFORMATION Rev. 00A ...

Page 42

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITES WRITE bursts are initiated with a WRITE command, as shown in WRITE Command diagram. WRITE COMMAND CLK HIGH CKE CS RAS CAS WE (X16)A0-A8 (X32)A0-A7 COLUMN ADDRESS (X8)A0-A9 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access ...

Page 43

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE BURST COMMAND ADDRESS WRITE TO WRITE RANDOM WRITE CYCLES COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com — PRELIMINARY INFORMATION Rev. 00A 09/18/ CLK WRITE NOP NOP BANK, COL n CLK COMMAND ...

Page 44

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE TO READ T0 CLK COMMAND WRITE BANK, ADDRESS COL Latency = 2 WRITE TO PRECHARGE (TWR @ TCK T0 CLK DQM COMMAND WRITE BANK a, ADDRESS COL NOP READ NOP BANK, COL b D n+1 IN 15NS ...

Page 45

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE to PRECHARGE ( CLK DQM COMMAND WRITE BANK a, ADDRESS COL WRITE Burst Termination COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com — PRELIMINARY INFORMATION Rev. 00A 09/18/ 15ns NOP NOP PRECHARGE BANK ...

Page 46

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE - FULL PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD Notes: 1) Burst Length = Full Page 2) X16: A9 and A11 = " ...

Page 47

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE - DQM OPERATION T0 t CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ Notes: 1) Burst Length = 4 2) X16: A9 and A11 = "Don't Care" ...

Page 48

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ALTERNATING BANK WRITE ACCESS CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK 0 DQ ...

Page 49

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended ...

Page 50

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL CLOCK SUSPEND MODE CLK CKS CKH CKE t t CMS CMH COMMAND READ NOP t t CMS CMH DQM/DQML DQMH/DQM0 (2) A0-A9, A11 COLUMN A10 BA0, BA1 BANK DQ Notes: 1) CAS latency = 3, Burst Length = 2 2) X16: A9 and A11 = " ...

Page 51

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL PRECHARGE The PRECHARGE command (see figure) is used to deac- tivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (t ) after the PRECHARGE RP command is issued. Input A10 determines whether one or ...

Page 52

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL POWER-DOWN MODE CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/DQML DQMH/DQM0-3 A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Precharge all All banks idle, enter active banks ...

Page 53

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length ...

Page 54

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing (CAS latency) later. The PRECHARGE to bank n will begin after t where t begins when the READ to bank m is registered. ...

Page 55

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL SINGLE READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS ...

Page 56

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK DQ t RCD ...

Page 57

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL SINGLE READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW DISABLE AUTO PRECHARGE BA0, BA1 BANK ...

Page 58

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD ...

Page 59

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL SINGLE WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK ...

Page 60

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD ...

Page 61

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL SINGLE WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH/DQM0 A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK ...

Page 62

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW ...

Page 63

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ORDERING INFORMATION - V Commercial Range Frequency Speed (ns) Order Part No. 133 MHz 7 IS42LS81600AL-7T 100 MHz 10 IS42LS81600AL-10T Frequency Speed (ns) Order Part No.Package 133 MHz 7 IS42LS16800AL-7B IS42LS16800AL-7T 100 MHz 10 IS42LS16800AL-10B IS42LS16800AL-10T Frequency Speed (ns) Order Part No.Package 133 MHz ...

Page 64

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ORDERING INFORMATION - V Commercial Range Frequency Speed (ns) Order Part No. 133 MHz 7 IS42LS81600AL-7TL 100 MHz 10 IS42LS81600AL-10TL Frequency Speed (ns) Order Part No. 133 MHz 7 IS42LS16800AL-7BL IS42LS16800AL-7TL 100 MHz 10 IS42LS16800AL-10BL IS42LS16800AL-10TL Frequency Speed (ns) Order Part No. 133 MHz 7 IS42LS32400AL-7BL ...

Page 65

... IS42S81600AL, IS42S16800AL, IS42S32400AL IS42LS81600AL, IS42LS16800AL, IS42LS32400AL ORDERING INFORMATION - V Commercial Range Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S81600AL-7T 100 MHz 10 IS42S81600AL-10T Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S16800AL-7B IS42S16800AL-7T 100 MHz 10 IS42S16800AL-10B IS42S16800AL-10T Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S32400AL-7B ...

Page 66

... Industrial Range: - Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S81600AL-7TLI 100 MHz 10 IS42S81600AL-10TLI 54-Pin TSOPII, Lead-free Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S16800AL-7BLI IS42S16800AL-7TLI 100 MHz 10 IS42S16800AL-10BLI IS42S16800AL-10TLI 54-Pin TSOPII, Lead-free Frequency Speed (ns) Order Part No. 133 MHz 7 IS42S32400AL-7BLI IS42S32400AL-7TLI 100 MHz 10 ...

Page 67

... C 0.12 0.21 D 22.02 22.42 E1 10.03 10.29 E 11.56 11.96 e 0.80 BSC L 0.40 0.60 L1 — — ZD 0.71 REF 0° 8° Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 01/28/02 N/2 Inches Min Max No. Leads (N) — 0.047 0.002 0.006 — — 0.012 0.018 0.005 0.0083 0.867 0.8827 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 — ...

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