is42vm32200g Integrated Silicon Solution, Inc., is42vm32200g Datasheet

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is42vm32200g

Manufacturer Part Number
is42vm32200g
Description
512k X 32bits X 4banks Low Power Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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is42vm32200g-75BLI
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400
Copyright © 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Description
These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input
and output voltage levels are compatible with LVCMOS.
Features
These IS42VM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.
JEDEC standard 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type.
Programmable CAS Latency : 2,3 clocks.
Programmable Driver Strength Control
Deep Power Down Mode.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
- Full Strength or 1/2, 1/4 of Full Strength
512K x 32Bits x 4Banks Low Power Synchronous DRAM
All inputs and outputs referenced to the positive edge of the
Data mask function by DQM.
Internal 4 banks operation.
Burst Read Single Write operation.
Special Function Support.
Automatic precharge, includes CONCURRENT Auto Precharge
system clock.
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
Mode and controlled Precharge.
IS42VM32200G
1

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is42vm32200g Summary of contents

Page 1

... Low Power Synchronous DRAM Description These IS42VM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input ...

Page 2

... NC CKE BA0 A9 /CAS NC NC DQ8 VDD VSS DQ10 DQ6 DQ9 DQ12 DQ1 DQ14 VDDQ VDDQ VSSQ VDD DQ15 VSS [Top View] IS42VM32200G 8 9 DQ23 DQ21 VSSQ DQ19 DQ20 VDDQ DQ18 VDDQ DQ16 VSSQ DQM2 VDD A0 A1 BA1 NC /CS /RAS /WE DQM0 DQ7 ...

Page 3

... RAS, CAS and WE define the operation. Refer function truth table for details. Controls output buffers in read mode and masks input data in write mode. Multiplexed data input/output pin. Power supply for internal circuits and input buffers. Power supply for output buffers. No connection. IS42VM32200G Descriptions : RA0~RA10 : CA0~CA7 : A10 3 ...

Page 4

... EXTENDED MODE REGISTER TCSR PASR ROW ADDRESS BUFFER & REFRESH COUNTER COLUMN ADDRESS BUFFER & BURST COUNTER DQM IS42VM32200G BANK D BANK C BANK B BANK A SENSE AMPLIFIER COLUMN DECODER & LATCH CIRCUIT DATA CONTROL CIRCUIT LATCH CIRCUIT INPUT & OUTPUT BUFFER DQ 4 ...

Page 5

... CKE POWER ON MODE SET MRS MODE IDLE SET DEEP DOWN ROW ACTIVE READ WRITE WRITE PRECHARGE PRE- CHARGE IS42VM32200G SELF REFRESH CBR REF REFRESH POWER DOWN CKE ↓ ACTIVE POWER CKE DOWN READ CKE ↓ READ READ SUSPEND CKE CKE ↓ ...

Page 6

... For a full-page burst, the full row is selected and A0-A7 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 6. Whenever a boundary of the block is reached within a 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 7. For a burst length of one, A0-A7 select the unique 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 +2, n +4… Not Supported n ... n IS42VM32200G Address Bus Mode Register (Mx) BT Burst Length Burst Type M2 M1 ...

Page 7

... IS42VM32200G Address Bus Extended Mode Register (Ex) 0 PASR Self Refresh Coverage All Banks Two Banks (BA1=0) One Bank (BA1=BA0=0) Reserved Reserved Half of One Bank (BA1=BA0=0, Row Address MSB=0) ...

Page 8

... The Extended Mode Register must be programmed with M7 through M11 set to “0”. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements results in unspecified operation. IS42VM32200G 8 ...

Page 9

... BA0-BA1 input select the bank, A0-A7 address inputs select the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. IS42VM32200G 9 ...

Page 10

... The DQs will start driving as a result of the clock edge one cycle earlier NOP NOP tOH tLZ Dout tAC CAS Latency NOP NOP NOP tOH tLZ Dout tAC CAS Latency=3 DON’T CARE UNDEFINED IS42VM32200G For example, assuming that the ...

Page 11

... IS42VM32200G /WE DQM ADDR CODE CODE Bank/Row L H L/H Bank/Col L H L/H Bank/Col L L L/H Bank/Col L L L/H Bank/Col ...

Page 12

... BA Col Add./A10 Write/WriteAP H BA Col Add./A10 Read/Read Operation Device Deselect IS42VM32200G Action Description Set the Mode Register Start Auto or Self Refresh No Operation Activate the Specified Bank and Row ILLEGAL ILLEGAL No Operation No Operation or Power Down ILLEGAL ILLEGAL ...

Page 13

... BA Row Add Col Add./A10 Col Add./A10 IS42VM32200G Action Description Mode Register Set ILLEGAL Auto or Self Refresh ILLEGAL Termination Burst : Precharge Start the Precharge Bank Activate ILLEGAL Termination Burst : Write/WriteAP Start Write(AP) Terimination Burst : Read/ReadAP ...

Page 14

... Row Add. Bank Activate L BA Col Add./A10 Write/WriteAP H BA Col Add./A10 Read/Read Operation Device Deselect IS42VM32200G Action Note ILLEGAL 13,14 ILLEGAL 13 No Operation : Bank(s) Idle after tRP ILLEGAL 4,12 ILLEGAL 4,12 ILLEGAL 4,12 No Operation : Bank(s) Idle after tRP No Operation : Bank(s) Idle after tRP ...

Page 15

... H BA Row Add Col Add./A10 Col Add./A10 IS42VM32200G Action Description Mode Register Set ILLEGAL Auto or Self Refresh ILLEGAL Precharge ILLEGAL Bank Activate ILLEGAL Write/WriteAP ILLEGAL Read/ReadAP ILLEGAL No Operation : No Operation Precharge after tDPL No Operation : ...

Page 16

... Must mask preceding data which don't satisfy tDPL. 11. Illegal if tRRD is not satisfied 12. Illegal for single bank, but legal for other banks in multi-bank devices. 13. Illegal for all banks. 14. Mode Register Set and Extended Mode Register Set is same command truth table except BA. IS42VM32200G 16 ...

Page 17

... IS42VM32200G Action A0-A10 X INVALID Exit Self Refresh with Device X Deselect X Exit Self Refresh with No Operation X ILLEGAL X ILLEGAL X ILLEGAL X Maintain Self Refresh X INVALID X Power Down Mode Exit, All Banks Idle ...

Page 18

... The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered from the all banks idle state. 6. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high and is maintained for a minimum 100usec. IS42VM32200G 18 ...

Page 19

... VDD=1.8V) Pin CLK A0~A10, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE, DQM0~DQM3 DQ0~DQ31 Symbol Min Typ VDD 1.65 VDDQ 1.65 V 0.8 X VDDQ 0.9 X VDDQ -1.5 LO IS42VM32200G Rating - -55 ~ 150 -1.0 ~ 2.6 -1 Symbol Min Max - °C) A Max Unit 1.8 1.95 V 1.8 1.95 ...

Page 20

... DC Output Load Circuit = - °C, VDD = 1.8V ± 0.15V, VSS=0V) A Symbol TRIP OUTREF C L VDDQ 500Ω Output 30pF IS42VM32200G Typ Unit 0.9 X VDDQ / 0.2 V 0.5 x VDDQ 0.5 x VDDQ VTT=0.5 x VDDQ 50Ω Z0=50Ω 30pF AC Output Load Circuit 20 ...

Page 21

... CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞ ICC3NS Input signals are stable. tCK>tCK(min), IOL = 0 mA, Page Burst ICC4 All Banks Activated, tCCD = 1 clk tRC ≥ tRFC(min), All Banks Active ICC5 ICC6 CKE ≤ 0.2V ICC7 IS42VM32200G Speed Unit Note -60 -75 - ...

Page 22

... tROH3 tROH2 2 tBDL 1 tCDL 1 tCKED 1 tPED 1 tREF 64 tRFC 66 tXSR 66 tT 0.5 1.2 IS42VM32200G -75 -10 Unit Min Max Min Max 7.5 10 1000 1000 2.5 2.5 2.5 2.5 2.0 2.0 1.0 1.0 2.0 2.0 1.0 1.0 2.0 2.0 1.0 1.0 2.0 2.0 1.0 1 1.0 1.0 2.5 2.5 1.8 1.8 45 100K ...

Page 23

... Timing actually specified by tDPL plus tRP; clock(s) specified as a reference only at minimum cycle rate 8. JEDEC and PC100 specify three clocks. 9. Timing actually specified by tCKs; clock(s) specified as a reference only at minimum cycle rate. 10. A new command can be given tRC after self refresh exit. IS42VM32200G 23 ...

Page 24

... Data will not be retained once the device enters Deep Power Down Mode. This mode is entered by having all banks idle then /CS and /WE held low with /RAS and /CAS held high at the rising edge of the clock, while CKE is low. This mode is exited by asserting CKE high. IS42VM32200G 24 ...

Page 25

... Precharge if needed Figure8: Deep Power Down Mode Exit CLK CKE /CS /RAS /CAS /WE 100 µ s tRP Deep Power Down Exit Auto Refresh All Banks Precharge tRP Deep Power Down Entry tRFC Auto Refresh IS42VM32200G Mode Register Set New Command Extended Mode Register Set 25 ...

Page 26

... Figure9: 90Ball FBGA Configuration Note: All Dimensions in millimeters 8.0±0.1 0.8 6.4 0. [Bottom View] IS42VM32200G Unit [mm] 0.45±0.05 1.2max 0.35±0.05 26 ...

Page 27

... Ordering Information – VDD = 1.8V Industrial Range: (- +85 Configuration Frequency (MHz) 2Mx32 166 133 100 C) o Speed Order Part No. (ns) 6 IS42VM32200G-6BLE 7.5 IS42VM32200G-75BLE 10 IS42VM32200G-10BLE IS42VM32200G Package 90-ball BGA, Lead-free 90-ball BGA, Lead-free 90-ball BGA, Lead-free 27 ...

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