m36w832te STMicroelectronics, m36w832te Datasheet - Page 49

• Manufacturer Part Number: m36w832te
• Description: 32 Mbit 2mb X16, Boot Block Flash Memory And 8 Mbit 512kb X16 Sram, Multiple Memory Product
• Manufacturer: STMicroelectronics

Table 30. CFI Query System Interface Information
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00B4h
00C6h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double/ Quadruple Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Double/ Quadruple Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DDF
DDF
PPF
PPF
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
times typical
n
n
µs
ms
n
times typical
n
M36W832TE, M36W832BE
µs
n
times typical
512µs
512µs
Value
11.4V
12.6V
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s
49/64