m48z12 STMicroelectronics, m48z12 Datasheet - Page 11

• Manufacturer Part Number: m48z12
• Description: 5v, 16kbit 2kb X 8 Zeropower Sram
• Manufacturer: STMicroelectronics

2.4
Figure 7.
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in
Figure 8 on page
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from V
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
Checking the BOK flag status
12) is recommended in order to provide the needed filtering.
(BATTERY OK)
COMPLEMENT BACK
TO SAME ADDRESS
AT ANY ADDRESS
WRITE ORIGINAL
ADDRESS AGAIN
SAME ADDRESS
DATA BACK TO
COMPLEMENT
WRITE DATA
READ DATA
READ DATA
POWER-UP
CONTINUE
AT SAME
OF FIRST
IS DATA
READ?
CC
CC
to V
YES
CC
that drive it to values below V
SS
bus. These transients can be reduced if
(cathode connected to V
NO
OF LOW BATTERY
(BATTERY LOW)
NOTIFY SYSTEM
(DATA MAY BE
CORRUPTED)
CC
bus. The energy stored in the
AI00607
CC
SS
, anode to V
by as much as
SS
11/20
).