lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet
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lh28f160bg-tl
Manufacturer Part Number
lh28f160bg-tl
Description
M-bit Smart Flash Memories
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F160BG-TL.pdf
(36 pages)
DESCRIPTION
The LH28F160BG-TL/BGH-TL flash memories with
Smart 3 technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. The LH28F160BG-TL/
BGH-TL can operate at V
Their low voltage operation capability realizes
longer battery life and suits for cellular phone
application. Their boot, parameter and main-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for portable terminals and personal
computers. Their enhanced suspend capabilities
provide for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F160BG-TL/BGH-TL offer two levels of
protection : absolute protection with V
selective hardware boot block locking. These
alternatives give designers ultimate control of their
code security needs.
FEATURES
• Smart 3 technology
• High performance read access time
COMPARISON TABLE
LH28F160BG-TL/BGH-TL
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
LH28F160BG-TL
LH28F160BGH-TL
LH28F160BV-TL
LH28F160BVH-TL
Refer to the datasheet of LH28F160BV-TL/BVH-TL.
– 2.7 to 3.6 V V
– 2.7 to 3.6 V or 12 V V
LH28F160BG-TL10/BGH-TL10
– 100 ns (2.7 to 3.6 V)
LH28F160BG-TL12/BGH-TL12
– 120 ns (2.7 to 3.6 V)
VERSIONS
CC
CC
PP
and V
BIT CONFIGURATION
2 MB x 8/1 MB x 16
2 MB x 8/1 MB x 16
1 MB x 16
1 MB x 16
PP
PP
= 2.7 V.
at GND,
- 1 -
• Enhanced automated suspend options
• SRAM-compatible write interface
• Optimized array blocking architecture
• Enhanced cycling capability
• Low power management
• Automated word write and block erase
• ETOX
• Packages
ETOX is a trademark of Intel Corporation.
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
– Two 4 k-word boot blocks
– Six 4 k-word parameter blocks
– Thirty-one 32 k-word main blocks
– Top or bottom boot location
– 100 000 block erase cycles
– Deep power-down mode
– Automatic power saving mode decreases I
– Command user interface
– Status register
– 48-pin TSOP Type I (TSOP048-P-1220)
– 60-ball CSP (FBGA060/048-P-0811)
in static mode
TM
16 M-bit (1 MB x 16) Smart 3
V nonvolatile flash technology
OPERATING TEMPERATURE
Normal bend/Reverse bend
LH28F160BG-TL/BGH-TL
–25 to +85°C
–40 to +85°C
0 to +70°C
0 to +70°C
Flash Memories
CC