lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 29
![no-image](/images/no-image-200.jpg)
lh28f160bg-tl
Manufacturer Part Number
lh28f160bg-tl
Description
M-bit Smart Flash Memories
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F160BG-TL.pdf
(36 pages)
- Current page: 29 of 36
- Download datasheet (224Kb)
NOTES :
1. V
2. Write block erase or word write setup.
3. Write block erase confirm or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. Write Read Array command.
CC
ADDRESSES (A)
power-up and standby.
DATA (D/Q)
RY/BY# (R)
WE# (W)
WP# (S)
OE# (G)
CE# (E)
RP# (P)
V
PP
(V)
Fig. 10 AC Waveform for WE#-Controlled Write Operations
V
V
V
V
V
V
V
V
V
V
High Z
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OL
IH
IL
HH
IH
IL
PPH1/2
PPLK
IL
(NOTE 1) (NOTE 2)
High Z
t
ELWL
t
PHWL
t
A
AVAV
IN
D
IN
t
t
t
WLWH
DVWH
WHWL
t
t
WHEH
WHDX
t
t
t
PHHWH
(NOTE 3)
AVWH
SHWH
t
VPWH
- 29 -
A
IN
D
t
WHAX
IN
t
WHRL
(NOTE 4)
t
WHQV1/2/3/4
t
WHGL
(NOTE 5)
t
t
QVVL
t
Valid
QVPH
SRD
QVSL
LH28F160BG-TL/BGH-TL
(NOTE 6)
D
IN
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