lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 17
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lh28f160bg-tl
Manufacturer Part Number
lh28f160bg-tl
Description
M-bit Smart Flash Memories
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F160BG-TL.pdf
(36 pages)
FULL STATUS CHECK PROCEDURE
Read Status Register
Write 40H or 10H,
Data and Address
Data (See Above)
Check if Desired
Status Register
Write Word
Word Write
Word Write
Successful
Full Status
Complete
Address
SR.7 =
SR.3 =
SR.1 =
SR.4 =
Read
Start
0
0
0
1
0
1
1
1
Word Write
No
Device Protect Error
Suspend
V
Word Write Error
PP
Fig. 4 Automated Word Write Flowchart
Range Error
Suspend Word
Write Loop
Yes
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OPERATION
OPERATION COMMAND
Write
Write
Read
Standby
Standby
Standby
Standby
Repeat for subsequent word writes.
SR full status check can be done after each word write or after
a sequence of word writes.
Write FFH after the last word write operation to place device
in read array mode.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple locations are
written before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
BUS
BUS
COMMAND
Word Write
Word Write
Setup
Check SR.3
1 = V
Check SR.4
1 = Data Write Error
Data = 40H or 10H
Addr = Location to be Written
Data = Data to be Written
Addr = Location to be Written
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.1
1 = Device Protect Detect
PP
Error Detect
COMMENTS
COMMENTS
LH28F160BG-TL/BGH-TL