lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 26
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lh28f160bg-tl
Manufacturer Part Number
lh28f160bg-tl
Description
M-bit Smart Flash Memories
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F160BG-TL.pdf
(36 pages)
- Current page: 26 of 36
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6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS
NOTES :
1. See AC Input/Output Reference Waveform (Fig. 7) for maximum allowable input slew rate.
2. OE# may be delayed up to t
3. Sampled, not 100% tested.
SYMBOL
•
t
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
PHQV
GLQV
ELQX
EHQZ
GLQX
GHQZ
OH
V
CC
= 2.7 to 3.6 V, T
Read Cycle Time
Address to Output Delay
CE# to Output Delay
RP# High to Output Delay
OE# to Output Delay
CE# to Output in Low Z
CE# High to Output in High Z
OE# to Output in Low Z
OE# High to Output in High Z
Output Hold from Address, CE# or
OE# Change, Whichever Occurs First
A
= 0 to +70
PARAMETER
VERSIONS
ELQV
-t
GLQV
˚
C or –25 to +85
after the falling edge of CE# without impact on t
˚
C
- 26 -
NOTE
2
2
3
3
3
3
3
LH28F160BGH-TL10 LH28F160BGH-TL12 UNIT
LH28F160BG-TL10
MIN.
100
10
0
0
0
(NOTE 1)
MAX.
100
100
45
45
20
ELQV
LH28F160BG-TL/BGH-TL
.
LH28F160BG-TL12
MIN.
120
10
0
0
0
MAX.
120
120
50
50
25
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
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