lh28f400su-lc Sharp Microelectronics of the Americas, lh28f400su-lc Datasheet - Page 22

• Manufacturer Part Number: lh28f400su-lc
• Description: 512k 256k Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F400SU-LC
DC Characteristics
22
SYMBOL
V
I
I
I
I
I
I
CCR
CCR
I
CCES
I
I
CCW
CCS
CCD
CCE
I
PPS
PPD
CC
I
LO
IL
1
2
= 3.3 V ± 0.3 V, T
Input Load Current
Output Leakage Current
V
V
Current
V
V
V
V
V
Current
V
V
Current
CC
CC
CC
CC
CC
CC
CC
PP
PP
Standby Current
Deep Power-Down
Block Erase Current
Standby Current
Deep Power-Down
Read Current
Read Current
Write Current
Erase Suspend
PARAMETER
A
= 0°C to +70°C
TYP.
0.3
0.2
0.2
10
±1
4
8
6
3
MIN.
MAX.
±10
±10
±1
15
35
20
16
12
4
8
6
8
UNITS
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
CE
BYTE = V
V
CE
BYTE = V
RP
V
CMOS: CE
BYTE = GND ±0.2 V or V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 8 MHz, I
V
CMOS: CE
BYTE = GND ±0.2 V or V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 4 MHz, I
CE
Block Erase Suspended
RP
V
V
Word/Byte Write in Progress
Block Erase in Progress
V
CC
CC
CC
CC
CC
CC
PP
4M (512K × 8, 256K × 16) Flash Memory
»
, RP
»
, RP
»
»
»
= GND ±0.2 V
= V
= GND ±0.2 V
= V
= V
= V
= V
= V
= V
V
IH
CC
»
»
CC
CC
CC
CC
CC
CC
»
»
TEST CONDITIONS
= V
= V
= V
= V
IL
IL
CC
IH
IL
IH
»
»
MAX., V
MAX., V
MAX.,
MAX.,
MAX.,
MAX.,
OUT
OUT
= GND ±0.2 V
= GND ±0.2 V
CC
IH
or V
or V
or V
IL
IL
or V
or V
±0.2 V or GND ±0.2 V
,
,
±0.2 V
= 0 mA
= 0 mA
IH
IH
IH
IL
IL
,
,
IN
IN
= V
= V
CC
CC
CC
CC
CC
CC
±0.2 V
±0.2 V
or GND
or GND
±0.2 V,
±0.2 V,
1, 3, 4
1, 3, 4
NOTE
1, 2
1,4
1
1
1
1
1
1
1