lh28f400su-lc Sharp Microelectronics of the Americas, lh28f400su-lc Datasheet - Page 23

• Manufacturer Part Number: lh28f400su-lc
• Description: 512k 256k Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

4M (512K × 8, 256K × 16) Flash Memory
DC Characteristics (Continued)
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
2. I
3. Automatic Power Saving (APS) reduces I
4. CMOS inputs are either V
5. In 2.7 V < V
6. V
SYMBOL
V
product versions (package and speeds).
I
I
V
V
V
V
I
V
CCES
CCES
I
I
PPES
V
PPW
V
PPL
PPR
V
CC
PPE
OH
OH
PPH
LKO
PPL
OL
IH
IL
1
2
in read is V
= 3.3 V ± 0.3 V, T
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
and I
CCR
V
V
V
V
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Operations
V
Operations
V
Lock Voltage
CC
PP
PP
PP
PP
PP
PP
CC
< 3.0 V operation, TTL-lelvel input of RP
.
Read Current
Write Current
Erase Current
Erase Suspend
during Write/Erase
during Normal
CC
Erase/Write
PARAMETER
- 0.2 V < V
CC
A
= 0°C to +70°C
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
PPL
< 5.5 V or GND < V
CCR
TYPE
5.0
15
20
to less than 2 mA in Static operation.
V
PPL
CC
MIN.
»
-0.3
2.0
0.0
4.5
1.4
2.4
is V
- 0.2
< GND + 0.2 V.
IL
(MAX.) = 0.6 V.
V
CC
CC
MAX.
200
200
= 3.3 V, V
0.8
0.4
5.5
5.5
35
40
+ 0.3
IL
or V
PP
UNITS
mA
mA
µA
µA
IH
= 5.0 V, T = 25°C. These currents are valid for all
V
V
V
V
V
V
V
V
.
V
Write in Progress
V
Block Erase in Progress
V
Block Erase Suspended
V
I
I
V
I
V
V
OL
OL
OL
PP
PP
PP
PP
CC
CC
CC
= 4 mA
= -2 mA
= 100 µA
TEST CONDITIONS
> V
= V
= V
= V
= V
= V
= V
CC
PPH
PPH
PPH
CC
CC
CC
MIN. and
MIN.
MIN.
, Word/Byte
,
,
LH28F400SU-LC
NOTE
1
1
1
1
6
5
23