m29dw256g Numonyx, m29dw256g Datasheet - Page 46

• Manufacturer Part Number: m29dw256g
• Description: 256-mbit X16, Multiple Bank, Page, Dual Boot 3 V Supply Flash Memory
• Manufacturer: Numonyx

Table 15.
1. Typical values measured at room temperature and nominal voltages and for not cycled devices.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Block erase polling cycle time
5. Intrinsic program timing, that means without the time required to execute the bus cycles to load the program commands.
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Chip Erase
Chip Erase
Block Erase (128 kword)
Block Erase (32 kword)
Erase Suspend latency time
Block Erase timeout
Word Program
Chip Program (word by word)
Chip Program (Write to Buffer Program)
Chip Program (Write to Buffer Program with V
Chip Program (Enhanced Buffered Program)
Chip Program (Enhanced Buffered Program with V
Program Suspend latency time
Program/Erase cycles (per block)
Data retention
Program/erase times and program/erase endurance cycles
VPP/WP = VppH
Single Word Program
Write to Buffer Program
(32 words at-a-time)
(4)
(seeFigure 20: Data polling AC
Parameter
(5)
(5)
PP
/WP = V
PP
/WP = V
V
V
PP
PP
PPH
waveforms).
/WP = V
/WP = V
)
(5)
PP
)
(5)
PPH
IH
CC
100,000
after 100,000 program/erase cycles.
Min
50
20
Typ
0.37
145
125
270
25
16
50
70
25
13
15
10
5
1
(1)(2)
Max
400
400
200
400
200
50
1.5
35
60
40
15
4
(3)
(3)
(3)
(3)
(3)
(3)
(2)
Cycles
Years
Unit
μs
μs
μs
μs
μs
s
s
s
s
s
s
s
s
s